Related papers: Room temperature Silicon detector for IR range coa…
Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compatible photonic systems. However, extending their…
Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong…
Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit…
Long Wavelenght infrared devices, despite growing interest due to a wide range of applications in commercial, public, and academic sectors, are still struggling to achieve significant improvements over well-established technologies like…
Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements…
Mid-infrared spectrum is a critical tool for chemical analysis, industrial inspection, environment, and other fields due to its rich chemical bond information. However, the complicated growth or fabrication procedures of existing…
Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon…
Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 um wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots (QDs) present a promising…
Photodetectors that are sensitive in shortwave infrared (SWIR) range (1 um - 2 um) are of significant interest for applications in 3D, night and adverse weather imaging, machine vision and autonomous driving, among others. Currently…
Large dynamic range room temperature photon number resolving (PNR) detectors can be very useful for measuring very low light intensities and for analyzing multiphoton quantum states. In this paper we present a PNR detector based on the…
Al/Si photodiode were prepared by successive of deposition of Aluminum thin films on p-type Si (100) using coprecipitation method by evaporator in vacuum 2.0E-4 torr. The measured signals are attributed to a spectral response, which appears…
Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are…
Broadband infrared photodetectors have profound importance in diverse applications including security, gas sensing, bioimaging, spectroscopy for food quality, and recycling, just to name a few. Yet, these applications can currently be…
The gapless surface states of topological insulators (TI) can potentially be used to detect and harvest low-frequency infrared light. Nonetheless, it was shown that significant surface photocurrents due to light with frequency below the…
Spectral imaging and detection of mid-infrared (mid-IR) wavelengths are emerging as an enabling technology of great technical and scientific interest; primarily because important chemical compounds display unique and strong mid-IR spectral…
Expanding far beyond traditional applications in optical interconnects at telecommunications wavelengths, the silicon nanophotonic integrated circuit platform has recently proven its merits for working with mid-infrared (mid-IR) optical…
Solution-processable near-infrared (NIR) photodetectors are urgently needed for a wide range of next-generation electronics, including sensors, optical communications and bioimaging. However, there is currently a compromise between low…
Silicon photonics is being extended from the near-infrared (near-IR) window of 1.3-1.5 {\mu}m for optical fiber communications to the mid-infrared (mid-IR) wavelength-band of 2 {\mu}m or longer for satisfying the increasing demands in many…
Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve…
A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the structural and optoelectronic properties of a 1.5 {\mu}m-thick…