Related papers: Room temperature Silicon detector for IR range coa…
Silicon-nitride-on-insulator photonic circuits have seen tremendous advances in many applications, such as on-chip frequency combs, Lidar, telecommunications, and spectroscopy. So far, the best film quality has been achieved with low…
We present recent results on our development of single photon detectors, including: gated and free-running InGaAs/InP avalanche photodiodes; hybrid detection systems based on sum-frequency generation and Si APDs; and SSPDs (superconducting…
The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical…
Refractive optical elements are widely used in millimeter and sub-millimeter astronomical telescopes. High resistivity silicon is an excellent material for dielectric lenses given its low loss-tangent, high thermal conductivity and high…
To cope with environments with high levels of radiation, non-silicon semiconductors such as silicon carbide detectors are being proposed for instrumentation. 4H-SiC diodes for radiation detection have been fabricated in the IMB-CNM Clean…
The characteristic properties of two-phase Ar avalanche detectors, including those obtained with CsI photocathode, are further studied. Such detectors are relevant in the field of coherent neutrino-nucleus scattering and dark matter search…
Chromatic calorimetry introduces a novel approach to calorimeter design in High Energy Physics (HEP) by integrating Quantum Dot (QD) technology into traditional homogeneous calorimeters. The tunable emission spectra of QDs provide new…
Although high-resistivity, low-loss silicon is an excellent material for THz transmission optics, its high refractive index necessitates antireflection treatment. We fabricated a wide-bandwidth, two-layer antireflection treatment by cutting…
Photodetectors based on nano-structured superconducting thin films are currently some of the most sensitive quantum sensors and are key enabling technologies in such broad areas as quantum information, quantum computation and…
Improved measurement techniques are central to technological development and foundational scientific exploration. Quantum optics relies upon detectors sensitive to non-classical features of light, enabling precise tests of physical laws and…
A robust process for fabricating intrinsic single-photon emitters in silicon nitride has been recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with the…
We experimentally demonstrate an integrated semiconductor ridge microcavity source of counterpropagating twin photons at room temperature in the telecom range. Based on parametric down conversion with a counterpropagating phase-matching,…
Broadband electrochromism from visible to infrared wavelengths is attractive for applications like smart windows, thermal-camouflage, and temperature control. In this work, the broadband electrochromic properties of Li4Ti5O12 (LTO) and its…
The ATLAS Forward Physics (AFP) project plans to install 3D silicon pixel detectors about 210 m away from the interaction point and very close to the beamline (2-3 mm). This implies the need of slim edges of about 100-200 $\mu$m width for…
We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to…
Spectral measurements in the infrared (IR) optical range provide unique fingerprints of materials which are useful for material analysis, environmental sensing, and health diagnostics. Current IR spectroscopy techniques require the use of…
In this paper the efficiency of direct charged particle detection with different Silicon PhotoMultiplier (SiPM) sensors has been measured to be close to 100%. Time resolution of about 20 ps has also been confirmed for sensors with an active…
We have fabricated highly-luminescent samples with erbium-doped amorphous silicon sub-oxide (a-SiOx<Er>) layers on SiO2/Si substrates. The layers are designed to provide a resonance with large modal overlap with the active material and with…
We demonstrate the combination of a hemispherical solid immersion lens with a micro-photoluminescence setup. Two advantages introduced by the SIL, an improved resolution of 0.4 times the wavelength in vacuum and a 5 times enhancement of the…
We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor's responses for neutrons. Detection efficiency is…