Related papers: Room temperature Silicon detector for IR range coa…
Quantum metrology has been shown to surpass classical limits of correlation, resolution, and sensitivity. It has been introduced to interferometric Radar schemes, with intriguing preliminary results. Even quantum-inspired detection of…
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their…
Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice…
Diamond silicon (Si) is the leading material in current solar cell market. However, diamond Si is an indirect band gap semiconductor with a large energy difference (2.4 eV) between the direct gap and the indirect gap, which makes it an…
We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID…
Intelligent reflecting surface (IRS) is a promising technology for enhancing wireless communication systems. It adaptively configures massive passive reflecting elements to control wireless channel in a desirable way. Due to hardware…
The improvement of light absorption in Si/BeSe$_{0.41}$Te$_{0.59}$ heterostructures for solar cell applications is studied theoretically. First, using simple approaches we found that light absorption could be improved in a single…
Conversion of Si to a direct bandgap semiconductor for optoelectronic application is a great challenge for many decades. It is proposed that embedment of suitable sized quantum dots into silicon matrix may be exploited to convert silicon to…
We report a high Responsivity broad band photo-detector working in the wavelength range 400 nm to 1100 nm in a horizontal array of Si microlines (line width ~1 micron) fabricated on a Silicon-on-Insulator (SOI) wafer. The array was made…
We report on the characterization of four Teledyne Imaging Systems HAWAII Hybrid Si CMOS detectors designed for X-ray detection. Three H1RG detectors were studied along with a specially configured H2RG. Read noise measurements were…
Quantum cascade detectors (QCD) are unipolar infrared devices where the transport of the photo excited carriers takes place through confined electronic states, without an applied bias. In this photovoltaic mode, the detector's noise is not…
Letter of intent describing SiD (Silicon Detector) for consideration by the International Linear Collider IDAG panel. This detector concept is founded on the use of silicon detectors for vertexing, tracking, and electromagnetic calorimetry.…
Encapsulation layers are explored for passivating the surfaces of silicon to reduce optical absorption in the 1500-nm wavelength band. Surface-sensitive test structures consisting of microdisk resonators are fabricated for this purpose.…
Silicon photodetectors operating at near-infrared wavelengths with high-speed and high sensitivity are becoming critical for emerging applications, such as Light Detection and Ranging Systems (LIDAR), quantum communications, and medical…
We propose and demonstrate a low-cost integrated photonic chip fabricated in a SOI foundry capable of simultaneously routing and amplifying light in a chip. This device is able to compensate insertion losses in photonic routers. It consists…
Ultra-sensitive short-wave infrared (SWIR) photon detection is a crucial aspect of ongoing research in quantum technology. However, developing such detectors on a CMOS-compatible silicon technological platform has been challenging due to…
Room temperature single photon sources (SPS) are crucial for developing the next generation quantum technologies. Quantum dots (QDs), recently, have been reported as promising materials as SPS at room temperature. By optimizing the single…
This paper introduces the Infra-Red, In Situ (IRIS) inspection method, which uses short-wave IR (SWIR) light to non-destructively "see through" the backside of chips and image them with lightly modified conventional digital CMOS cameras.…
We have developed large-area lithium-drifted silicon (Si(Li)) detectors to meet the unique requirements of the General Antiparticle Spectrometer (GAPS) experiment. GAPS is an Antarctic balloon-borne mission scheduled for the first flight in…
Quantum technologies promise profound advances in communication security, sensing and computing. The underpinning hardware must be engineered to generate, manipulate and detect quantum phenomena with exceptional performance, whilst being…