Related papers: Room temperature Silicon detector for IR range coa…

This White Paper seeks to extend the applications of two weakly bound semiconductor materials, Cs3Sb and Ag-O-Cs first developed decades ago for vacuum photodetectors S1, S-11 photocathodes, respectively, proven to have low electron-hole…

Atomic-scale crystal defects in Si are quantum-light sources offering tantalizing integration with existing photonic technologies. Yet, the controlled creation of near-infrared color centers for long- haul quantum communication and…

Silicon carbide (SiC) is a highly promising material for the rapidly growing UV detection industry due to its visible-blindness, low dark current, and exceptional thermal and chemical stability. Despite these advantages, the performance of…

This work introduces a novel reinterpretation of structured illumination (SI) microscopy for coherent imaging that allows three-dimensional imaging of complex refractive index (RI). To do so, we show that coherent SI is mathematically…

Quantum illumination is a powerful sensing technique that employs entangled signal-idler photon pairs to boost the detection efficiency of low-reflectivity objects in environments with bright thermal noise. The promised advantage over…

By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self…

Silicon optics with wide bandwidth anti-reflection (AR) coatings, made of multi-layer textured silicon surfaces, are developed for millimeter and submillimeter wavelengths. Single and double layer AR coatings were designed for an optimal…

This letter introduces a novel class of miniaturized, uncooled, and ultra-fast infrared (IR) resonant thermal detectors (RTDs) based on 30%-doped Aluminum Scandium Nitride (AlScN) nanoplates. Exploiting high electromechanical coupling, good…

Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical…

We utilize the recently demonstrated orders of magnitude enhancement of extremely nondegenerate two-photon absorption in direct-gap semiconductor photodiodes to perform scanned imaging of 3D structures using IR femtosecond illumination…

High-purity single photon sources (SPS) that can operate at room temperature are highly desirable for a myriad of applications, including quantum photonics and quantum key distribution. In this work, we realise an ultra-bright solid-state…

An ultrabroadband upconversion device is demonstrated by direct tandem integration of a p-type GaAs/AlxGa1-xAs ratchet photodetector (RP) with a GaAs double heterojunction LED (DH-LED) using the molecular beam epitaxy (MBE). An…

This study presents a fabrication process for lithium-drifted silicon (Si(Li)) detectors that, compared to previous methods, allows for mass production at a higher yield, while providing a large sensitive area and low leakage currents at…

We probe the possible double-Weyl state in cubic SrSi2 using optical spectroscopy. The complex optical conductivity was measured in a frequency range from 70 to 22 000 cm-1 at temperatures down to 10 K at ambient pressure. The optical…

The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low…

Broadband refractive optics realized from high index materials provide compelling design solutions for the next generation of observatories for the Cosmic Microwave Background (CMB), and for sub-millimeter astronomy. In this paper, work is…

Photodetectors with broadband optical response have promising applications in many advanced optoelectronic and photonic devices. Especially, those with the detection range up to mid-infrared at room temperature are very challenging and…

Semiconductor quantum photonic circuits can be used to efficiently generate, manipulate, route and exploit non-classical states of light for distributed photon based quantum information technologies. In this article, we review our recent…

The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it…

Issues of Ge hut cluster nucleation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM investigations of Ge/Si…