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Quantum photonic networks require two distinct functionalities: bright single-photon sources and long-lived quantum memories. III-V semiconductor quantum dots excel as deterministic and coherent photon emitters, while rare-earth ions such…
Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by…
Non-classical light sources offer a myriad of possibilities in fundamental science and applications including quantum cryptography and quantum lithography. Single photons can encode quantum information and multi-qubit gates in silica…
Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are…
Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compatible photonic systems. However, extending their…
Group IV Ge1-xSnx semiconductors hold the premise of enabling broadband silicon-integrated infrared optoelectronics due to their tunable bandgap energy and directness. Herein, we exploit these attributes along with the enhanced lattice…
Using multiband k*p theory we study the size and geometry dependence on the slow light properties of conical semiconductor quantum dots. We find the V-type scheme for electromagnetically induced transparency (EIT) to be most favorable, and…
Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve…
The emerging hybrid integrated quantum photonics combines advantages of different functional components into a single chip to meet the stringent requirements for quantum information processing. Despite the tremendous progress in hybrid…
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent…
Colloidal quantum dots (QDs) integrated with waveguide-coupled dielectric resonators are promising building blocks for compact on-chip light sources. However, deterministic placement of QDs with strong mode overlap at the desired location…
Strong coupling between quantum emitters and optical cavities is essential for quantum information processing, high-purity single-photon sources, and nonlinear quantum devices. Achieving this regime at room temperature in a compact,…
We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP…
Nanoscale infrared (IR) resonators with sub-diffraction limited mode volumes and open geometries have emerged as new platforms for implementing cavity quantum electrodynamics (QED) at room temperature. The use of infrared (IR) nano-antennas…
Semiconductor doped glasses had been used by the research and engineering communities as color filters or saturable absorbers well before it was realized that their optical properties were defined by tiny specs of semiconductor matter known…
Er doped Si light emitting diodes may find important applications in the generation and storage of quantum information. These diodes exhibit an emission efficiency two orders of magnitude higher at reverse bias than forward bias due to…
Semiconductor quantum dots (QDs) grown by molecular beam epitaxy are excellent quantum emitters, but their random spatial distribution hinders deterministic coupling to optical microcavities. We demonstrate a room-temperature atomic force…
Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic and photonic devices. In the growth and processing of these…
The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a…
Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded…