Related papers: Efficient room-temperature light-emitters based on…
Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter- and intrachip optical connections. We introduce and fabricate a novel coaxial…
The photo-luminescence features of Ge-oxygen defect centers in a 100nm thick Ge-doped silica film on a pure silica substrate were investigated by looking at the emission spectra and time decay detected under synchrotron radiation excitation…
The realization of a scalable architecture for quantum information processing is a major challenge for quantum science. A promising approach is based on emitters in nanostructures that are coupled by light. Here, we show that erbium dopants…
Experimental results obtained previously for the photoluminescence efficiency (PL$_{eff}$) of Ge quantum dots (QDs) are theoretically studied. A $\log$-$\log$ plot of PL$_{eff}$ versus QD diameter ($D$) resulted in an identical slope for…
Integrated quantum photonic circuitry is an emerging topic that requires efficient coupling of quantum light sources to waveguides and optical resonators. So far, great effort has been devoted to engineering on-chip systems from…
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an…
We present the fabrication process of bright $GaAs$ quantum dot (QD) photon sources by non-deterministic embedding into broadband monolithic $Al_{0.15}Ga_{0.85}As$ microlens arrays on gold-coated substrates. Arrays of cylindrical…
CMOS-compatible short- and mid-wave infrared emitters are highly coveted for the monolithic integration of silicon-based photonic and electronic integrated circuits to serve a myriad of applications in sensing and communications. In this…
We demonstrate a novel transmitter concept for quantum key distribution based on the polarization-encoded BB84 protocol, which is sourced by the incoherent light of a forward-biased Ge-on-Si PIN junction. We investigate two architectures…
Low cost, small footprint, highly efficient and mass producible on-chip wavelength-division-multiplexing (WDM) light sources are key components in future silicon electronic and photonic integrated circuits (EPICs) which can fulfill the…
The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies.…
We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV$^-$) color centers in diamond as quantum emitters. Hybrid SiC/diamond structures are…
Near infrared color centers in silicon are emerging candidates for on-chip integrated quantum emitters, optical access quantum memories and sensing. We access ensemble G color center formation dynamics and radiation-induced atomic disorder…
Future scalable photonic quantum information processing relies on the ability of integrating multiple interacting quantum emitters into a single chip. Quantum dots provide ideal on-chip quantum light sources. However, achieving quantum…
Electro-optic modulators from non-linear $\chi^{(2)}$ materials are essential for sensing, metrology and telecommunications because they link the optical domain with the microwave domain. At present, most geometries are suited for fiber…
Most, if not all, photonic quantum computing (PQC) relies upon superconducting nanowire single-photon detectors (SNSPDs) based on niobium (Nb) operated at a temperature < 4 K. This paper proposes and analyzes 300 K waveguide-integrated…
We report the resonantly enhanced radiative emission from a single SiGe quantum dot (QD), which is deterministically embedded into a bichromatic photonic crystal resonator (PhCR) at the position of its largest modal electric field by a…
Unbalanced charge injection is deleterious for the performance of colloidal quantum dot (CQD) light emitting diodes (LEDs) as it deteriorates the quantum efficiency (QE), brightness and operational lifetime. CQD LEDs emitting in the…
Achieving strong coupling between excitons of colloidal semiconductor quantum dots (QDs) and localized surface plasmon polaritons (LSPs) is critical for advanced room-temperature quantum emitter and sensing applications. A key challenge is…
As one of the most important semiconductors, silicon (Si) has been used to fabricate electronic devices, waveguides, detectors, and solar cells etc. However, its indirect bandgap hinders the use of Si for making good emitters1. For…