The optical emission spectra from Ge films on Si are markedly different from their bulk Ge counterparts. Whereas bulk Ge emission is dominated by the material's indirect gap, the photoluminescence signal from Ge films is mainly associated with its direct band gap. Using a new class of Ge-on-Si films grown by a recently introduced CVD approach, we study the direct and indirect photoluminescence from intrinsic and doped samples and we conclude that the origin of the discrepancy is the lack of self-absorption in thin Ge films combined with a deviation from quasi-equilibrium conditions in the conduction band. The latter is confirmed by a simple model suggesting that the deviation from quasi-equilibrium is caused by the much shorter recombination lifetime in the films relative to bulk Ge.
@article{arxiv.1106.3300,
title = {Direct vs. indirect optical recombination in Ge films grown on Si substrates},
author = {G. Grzybowski and R. Roucka and J. Mathews and R. T Beeler and J. Kouvetakis and J. Menéndez},
journal= {arXiv preprint arXiv:1106.3300},
year = {2015}
}