Related papers: Electron counting in a silicon single-electron pum…
Analysis of room-temperature current-voltage (I-V) characteristics of a silicon box in a nanopillar transistor suggests that a weak electromechanical coupling of 0.17 is responsible for the stable tunnel of single-electron. The dynamics…
Recently a new explanation for the quantized current of the surface acoustic wave (SAW)-driven single electron pumps was suggested [1]. In the SAW-driven pumps the electrons are transported by the SAW along a one-dimensional semiconductor…
We report the fabrication and measurement of one-electron single and double quantum dots with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-electron dots can be challenging, in part due to the large…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
We propose a time-dependent approach to investigate the motion of electrons in quantum pump device configurations. The occupied one-particle states are propagated in real time and used to calculate the local electron density and current. An…
We review the latest progress in understanding the fundamental noise properties of a coherent single electron emitter known as the mesoscopic capacitor. The system consists of a sub-micron cavity connected to a two-dimensional electron gas…
We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field…
We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart,…
We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown.…
A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is…
We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion…
Engineered dissipation provides a powerful route to controlling and stabilizing quantum states in open systems. Superconducting circuits are particularly suited to this approach due to their tunable coupling to dissipative environments.…
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The…
We consider two driven cavities (capacitors) connected in series via an edge state. The cavities are driven such that they emit an electron and a hole in each cycle. Depending on the phase lag the second cavity can effectively absorb the…
Two quantized charge pumps are operated in parallel. The total current generated is shown to be far more accurate than the current produced with just one pump operating at a higher frequency. With the application of a perpendicular magnetic…
We optimize the operation of single-electron charge pumps using full counting statistics techniques. To this end, we evaluate the statistics of pumped charge on a wide range of driving frequencies using Floquet theory, focusing here on the…
We study the full charge counting statistics of a charge pump based on a nearly open single electron transistor. The problem is mapped onto an exactly soluble problem of a g=1/2 non-equilibrium Luttinger liquid with an impurity. We obtain…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the…
Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part to another. For example, in a quantum computer[1] decoherence and circuit complexity…