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We study the current noise through an unbiased quantum electron pump and its mesoscopic fluctuations for arbitrary temperatures and beyond the bilinear response. In the bilinear regime, we find the full distributions of the noise power and…
The generation of ac modulated quantized current waveforms using a semiconductor non-adiabatic single electron pump is demonstrated. In standard operation the single electron pump generates a quantized output current of I = ef where e is…
We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of…
In a quantum charge pump, the periodic variation of two parameters that affect the phase of the electronic wavefunction causes the flow of a direct current. The operating mechanism of a quantum pump is based on quantum interference, the…
We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…
A theoretical study of single electron capacitance spectroscopy in quantum dots is presented. Exact diagonalizations and the unrestricted Hartree-Fock approximation have been used to shed light over some of the unresolved aspects. The…
Motivated by recent real-time electron counting experiments, we evaluate the full counting statistics (FCS) for the probability distribution of the electron number inside a quantum dot which is weakly coupled to source and drain leads. A…
A quantum pumping mechanism which produces dc current or voltage in response to a cyclic deformation of the confining potential in an open quantum dot is reported. The voltage produced at zero current bias is sinusoidal in the phase…
We have used a superconducting single-electron transistor as a DC-electrometer that is strongly coupled to the metal island of another transistor. With this set-up, it is possible to directly measure the charge distribution on this island.…
We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot…
We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by…
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…
We demonstrate how rate equations can be employed to find analytical expressions for the sequential tunneling current through a quantum dot as a function of the tunnel rates, for an arbitrary number of states involved. We apply this method…
We provide provide a detailed study of biasless coherent transport of singlet electron pairs in one-dimensional (1D) channels induced by electron-electron interactions that are time-varying in certain spatially localized regions of the…
A semiconductor quintuple quantum dot with two charge sensors and an additional contact to the center dot from an electron reservoir is fabricated to demonstrate the concept of scalable architecture. This design enables formation of the…
Non-adiabatic pumping of discrete charges, realized by a dynamical quantum dot in an AlGaAs/GaAs heterostructure, is studied under influence of a perpendicular magnetic field. Application of an oscillating voltage in the GHz-range to one of…
We report on the electron analog of the single photon gun. On demand single electron injection in a quantum conductor was obtained using a quantum dot connected to the conductor via a tunnel barrier. Electron emission is triggered by…
Electron transfer to an individual quantum dot promotes the formation of charged excitons with enhanced recombination pathways and reduced lifetimes. Excitons with only one or two extra charges have been observed and exploited for very…
Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but…
We present time-resolved measurements of electron transport through a quantum dot. The measurements were performed using a nearby quantum point contact as a charge detector. The rates for tunneling through the two barriers connecting the…