Related papers: Formation of Strain-Induced Quantum Dots in Gated …
Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length dependence of the formation of quantum dots. We observe…
A double quantum dot is formed in a graphene nanoribbon device using three top gates. These gates independently change the number of electrons on each dot and tune the inter-dot coupling. Transport through excited states is observed in the…
The electrostatic energy of an additional electron on a conducting grain blocks the flow of current through the grain, an effect known as the Coulomb blockade. Current can flow only if two charge states of the grain have the same energy; in…
Building up a solid-state material from quantum dots (QD), which are often referred to as artificial atoms, offers the potential to create new materials with unprecedented macroscopic properties. The investigation of the electronic…
Spatial confinement and manipulation of charged carriers in semiconducting nanostructures are essential for realizing quantum electronic devices. Gate-defined nanostructures made of two-dimensional (2D) semiconducting transition metal…
A long skinny gate across a fractional quantum Hall fluid at filling $\nu=1/m$ with odd integer $m$, creates a novel one-dimensional (1d) system which is isomorphic to a disordered 1d electron gas with {\it attractive} interactions. By…
Double quantum dots (DQDs) hold great promise as building blocks for quantum technology as they allow for two electronic states to coherently couple. Defining QDs with materials rather than using electrostatic gating allows for QDs with a…
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…
Quantum dot lasers have been the focus of researchers due to their interesting optical properties owing to quantum confinement of carriers. In epitaxial quantum dots formed on a substrate, band-edge diagrams sound to more complex than…
Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs) are predicted to exhibit a strong non-parabolic dependence of the interband transition energy on the electric field, which is not encountered in single SAD…
The spatial distribution of spurious dots in SiMOS single-electron transistors (SETs), fabricated on an industrial 300 mm process line, has been statistically analyzed. To have a deeper understanding of the origin of these spurious dots, we…
In this chapter quantum many body theoretical methods have been used to study properties of GaAs - and InAs - based, small semiconductor compound quantum dots (QDs) containing manganese or vanadium atoms. Interest to such systems has grown…
Generally, there are two distinct effects in modifying the properties of low-dimensional nanostructures: surface effect (SS) due to increased surface-volume ratio and quantum size effect (QSE) due to quantum confinement in reduced…
An implementation of a universal solid-state quantum register based on electron space states in field-defined double quantum dots (DQD possesses one electron in two adjacent tunnel bound dots) in an ultrathin semiconductor nanowire is…
We present a theory of non-equilibrium superconducting proximity effect in an interacting quantum dot induced by a time-dependent tunnel coupling between dot and a superconducting lead. The proximity effect, that is established when the…
Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has…
We show that two electrons confined in a square semiconductor quantum dot have two isolated low-lying energy eigenstates, which have the potential to form the basis of scalable computing elements (qubits). Initialisation, one-qubit and…
Graphene is a nonmagnetic semimetal and cannot be directly used as electronic or spintronic devices. We demonstrate that graphene quantum dots (GQDs) can exhibit strong edge magnetism and tunable energy gaps due to the presence of localized…
A quantum dot (QD) system provides various quantum physics of nanostructures. So far, many types of semiconductor QD structures have been fabricated and investigated experimentally and analyzed theoretically. Presently, QD systems have…
A quantum dot is a sub-micron-scale conducting device containing up to several thousand electrons. Transport through a quantum dot at low temperatures is a quantum-coherent process. This review focuses on dots in which the electron's…