Related papers: Formation of Strain-Induced Quantum Dots in Gated …
We find an interference effect for electron-phonon interactions in coupled semiconductor quantum dots that can dominate the nonlinear transport properties even for temperatures close to zero. The intradot electron tunnel process leads to a…
A full three-dimensional model for the calculation of the electronic structure of semiconductor quantum dots (QD) and molecules (QDM) grown on high index surfaces and/or in the presence of an external magnetic field is presented. The strain…
We perform scanning gate microscopy on individual suspended carbon nanotube quantum dots. The size and position of the quantum dots can be visually identified from the concentric high conductance rings. For the ultra clean devices used in…
Nonreciprocal dissipationless transport has long been sought for applications in superconducting technologies. Recently, it has been implemented by the so called superconducting diode effect. Such effect arises from an imbalance in critical…
A potential scheme is proposed for realizing a two-qubit quantum gate in semiconductor quantum dots. Information is encoded in the spin degrees of freedom of one excess conduction electron of each quantum dot. We propose to use two lasers,…
Quantized conductance is reported in high-crystalline tin oxide (SnO2) nanobelt back-gate field-effect transistors, at low temperatures. The quantized conductance was observed as current oscillations in the drain current vs. gate voltage…
We study the band structure of semiconductor nanowires with quantum dots embedded in them. The band structure is calculated using the Rayleigh-Ritz variational method. We consider quantum dots of two different types, one type is defined by…
Planar germanium quantum wells have recently been shown to host hard-gapped superconductivity. Additionally, quantum dot spin qubits in germanium are well-suited for quantum information processing, with isotopic purification to a nuclear…
Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such…
Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward…
A quantum kinetic theory is used to compute excitation induced dephasing in semiconductor quantum dots due to the Coulomb interaction with a continuum of states, such as a quantum well or a wetting layer. It is shown that a frequency…
Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In materials integra-tion, strain is typically tuned through…
By means of the first-principles calculations combined with the tight-binding approximation, the strain-induced semiconductor-semimetal transition in graphdiyne is discovered. It is shown that the band gap of graphdiyne increases from 0.47…
Modern nanotechnology allows producing, depending on application, various quantum nanostructures with the desired properties. These properties are strongly influenced by the confinement potential which can be modified, e.g., by electrical…
Colloidal quantum dots (cQDs) recently emerged as building blocks for semiconductor materials with tuneable properties. Electro-hydrodynamic printing can be used to obtain sub-micrometre patterns of cQDs without elaborate and aggressive…
Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod…
In this study, we address challenges in designing quantum information processors based on electron spin qubits in electrostatically-defined quantum dots (QDs). Numerical calculations of charge stability diagrams are presented for a…
Quantum effects at the nanometric level have been observed in many confined structures, and particularly in semiconductor quantum dots (QDs). In this work, we propose a theoretical improvement of the so-called effective mass approximation…
We report results on superconducting tunneling spectroscopy of a carbon nanotube quantum dot. Using a three-probe technique that includes a superconducting tunnel probe, we map out changes in conductance due to band structure, excited…
We employ density functional theory to calculate the self consistent electronic structure, free energy and linear source-drain conductance of a lateral semiconductor quantum dot patterned via surface gates on the 2DEG formed at the…