Excitation Induced Dephasing in Semiconductor Quantum Dots
Materials Science
2009-11-10 v2
Abstract
A quantum kinetic theory is used to compute excitation induced dephasing in semiconductor quantum dots due to the Coulomb interaction with a continuum of states, such as a quantum well or a wetting layer. It is shown that a frequency dependent broadening together with nonlinear resonance shifts are needed for a microscopic explanation of the excitation induced dephasing in such a system, and that excitation induced dephasing for a quantum-dot excitonic resonance is different from quantum-well and bulk excitons.
Keywords
Cite
@article{arxiv.cond-mat/0310319,
title = {Excitation Induced Dephasing in Semiconductor Quantum Dots},
author = {H. C. Schneider and W. W. Chow and S. W. Koch},
journal= {arXiv preprint arXiv:cond-mat/0310319},
year = {2009}
}
Comments
6 pages, 4 figures. Extensively revised text, two figures changed