Related papers: Formation of Strain-Induced Quantum Dots in Gated …
The dynamic response of InAs/GaAs self-assembled quantum dots (QDs) to strain is studied experimentally by periodically modulating the QDs with a surface acoustic wave and measuring the QD fluorescence with photoluminescence and resonant…
A microscopic theory for the interaction of carriers with LO phonons is used to study the ultrafast carrier dynamics in nitride-based semiconductor quantum dots. It is shown that the efficiency of scattering processes is directly linked to…
The observation of quantum light emission from atomically thin transition metal dichalcogenides has opened a new field of applications for these material systems. The corresponding excited charge-carrier localization has been linked to…
Quantum dots (QDs) investigated through electron transport measurements often exhibit varying, state-dependent tunnel couplings to the leads. Under specific conditions, weakly coupled states can result in a strong suppression of the…
Germanium quantum dots in strained $\text{Ge}/\text{Si}_{1-x}\text{Ge}_{x}$ heterostructures exhibit fast and coherent hole qubit control in experiments. In this work, we theoretically and numerically address the effects of random alloy…
We study the electronic transport through a quantum wire (QW) with a strong side coupled quantum dot (QD). We obtain a linear conductance with lateral peaks when the gate voltage, is located near the edge of the conduction band. The…
We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…
Electron spins confined in silicon quantum dots are promising candidates for large-scale quantum computers. However, the degeneracy of the conduction band of bulk silicon introduces additional levels dangerously close to the window of…
The properties of a semiconductor get drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their…
Lattice mismatch in layered semiconductor structures with submicron length scales leads to extremely high nonuniform strains. This paper presents a finite element technique for incorporating the effects of the nonuniform strain into an…
Atomically thin two-dimensional semiconducting transition metal dichalcogenides (TMDs) can withstand large levels of strain before their irreversible damage occurs. This unique property offers a promising route for control of the optical…
Semiconductor coupled quantum dots provide a unique opportunity of tuning bandgaps by tailoring band offsets, making them ideal for photovoltaic and other applications. Here, we have studied stability, trends in the band gap, band offsets,…
The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformation induced by CMOS-manufactured titanium nitride electrodes…
Scaling up quantum computing hardware is hindered by the narrow operating margins of current quantum components. Here, we introduce a composite qubit and gate scheme that achieves wide margins by use of transistor-like nonlinearities to…
A powerful approach to analysing quantum systems with dimensionality $d>1$ involves adding a weak coupling to an array of one-dimensional (1D) chains. The resultant quasi-one-dimensional (q1D) systems can exhibit long-range order at low…
Optically active III-V group semiconductor quantum dots (QDs) are the leading element of the upcoming safe quantum communication. However, the entire electronic and IT infrastructure relies on silicon-based devices, with silicon also…
We theoretically investigate electronic transport through a junction where a quantum dot (QD) is tunnel coupled on both sides to semiconductor nanowires with strong spin-orbit interaction and proximity-induced superconductivity. The results…
The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to…
The search for half-metals and spin-gapless semiconductors has attracted extensive attention in material design for spintronics. Existing progress in such a search often requires peculiar atomistic lattice configuration and also lacks…
We present a detailed study of the surface acoustic wave mediated quantized transport of electrons through a split gate device containing an impurity potential defined quantum dot within the split gate channel. A new regime of quantized…