Related papers: Formation of Strain-Induced Quantum Dots in Gated …
Elastic strain engineering utilizes stress to realize unusual material properties. For instance, strain can be used to enhance the electron mobility of a semiconductor, enabling more efficient solar cells and smaller, faster transistors. In…
Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a…
In a family of experiments carried on all-metallic supercurrent nano-transistors a surprising gating effect has been recently shown. These include the full suppression of the critical supercurrent, the increase of quasiparticle population,…
We show how nanostructuring of a metallic gate on a field-effect transistor (FET) can lead to a macroscopic, robust and voltage controlled quantum state in the electron channel of a FET. A chain of triple quantum dot molecules created by…
Solid-state quantum emitters (QEs) in two-dimensional semiconductors offer compact, chip-compatible sources for quantum photonics. In transition-metal dichalcogenides (TMDs), nanopillars are widely used to induce localized emission, yet the…
In superconductivity, electrons exhibit unique macroscopic collective quantum behavior that is the key for many modern quantum technologies. This electron behavior stems vastly from coupling to a correlated motion of atoms in the material,…
Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the development of deterministic sources of high-quality quantum states of light. Such non-classical light sources are essential for quantum information…
Semiconductor quantum dots (QDs) offer a platform to explore the physics of quantum electronics including spins. Electron spins in QDs are considered good candidates for quantum bits in quantum information processing, and spin control and…
Transport properties of a gated nanostructure depend crucially on the coupling of its states to the states of electrodes. In the case of a single quantum dot the coupling, for a given quantum state, is constant or can be slightly modified…
The nature of a metal-insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions, as reported in recent experiments of Roddaro et al [1], is examined. We attribute this phenomenon to a splitting of…
Studying quantum properties in solid-state systems is a significant avenue for research. In this scenario, double quantum dots (DQDs) appear as a versatile platform for technological breakthroughs in quantum computation and nanotechnology.…
Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape…
We study the electron states of a chain of non-identical, vertically stacked quantum dots (QDs). We discuss how the pseudo-band formed of the ground states confined in the QDs disintegrates upon increasing the inhomogeneity of the electron…
Properties of quantum dot based spin qubits have significant inter-device variability due to unavoidable presence of various types of disorder in semiconductor nanostructures. A significant source of this variability is charge disorder at…
The electronic structure of an infinite 1D array of vertically coupled InAs/GaAs strained quantum dots is calculated using an eight-band strain-dependent k-dot-p Hamiltonian. The coupled dots form a unique quantum wire structure in which…
Recent progress in nanotechnology has allowed to fabricate new hybrid systems where a single two-level system is coupled to a mechanical nanoresonator. In such systems the quantum nature of a macroscopic degree of freedom can be revealed…
We theoretically model the formation of quantum dots(QDs) and quantum dot molecules(QDMs) in silicon germanium heteroepitaxy by explicitly incorporating the role of noise in a continuum theory for surface evolution in molecular beam…
We demonstrate quantum dot (QD) formation in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$ nanowires using two electrostatically tuned p$-$n junctions with a gate and magnetic fields. The linear conductance measured as a function of…
We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an…
Solid-state quantum emitters are pivotal for modern photonic quantum technology, yet their inherent spectral inhomogeneity imposes a critical challenge in pursuing scalable quantum network. Here, we develop a cryogenic-compatible…