English

Anomalous quantum confined Stark effects in stacked InAs/GaAs self-assembled quantum dots

Mesoscale and Nanoscale Physics 2009-11-07 v1

Abstract

Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs) are predicted to exhibit a strong non-parabolic dependence of the interband transition energy on the electric field, which is not encountered in single SAD structures nor in other types of quantum structures. Our study based on an eight-band strain-dependent kp{\bf k}\cdot{\bf p} Hamiltonian indicates that this anomalous quantum confined Stark effect is caused by the three-dimensional strain field distribution which influences drastically the hole states in the stacked SAD structures.

Keywords

Cite

@article{arxiv.cond-mat/0107060,
  title  = {Anomalous quantum confined Stark effects in stacked InAs/GaAs self-assembled quantum dots},
  author = {Weidong Sheng and Jean-Pierre Leburton},
  journal= {arXiv preprint arXiv:cond-mat/0107060},
  year   = {2009}
}

Comments

4 pages, 4 figures