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A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…
The nodal-line semimetals NaAlSi and NaAlGe have significantly different ground states despite having similar electronic structures: NaAlSi exhibits superconductivity below 7 K, while NaAlGe exhibits semiconductive electrical conductivity…
The use of liquid metal batteries is considered as one promising option for electric grid stabilisation. While large versions of such batteries are preferred in view of the economies of scale, they are susceptible to various…
We study fluctuation conductivity in a single crystal of BaFe$_{1.9}$Ni$_{0.1}$As$_2$ superconductor ($T_c$ = 20 K) as a function of temperature and applied magnetic field. Magneto-conductivity curves, $\Delta \sigma$ vs. $T$, were analyzed…
We report on detailed room temperature and low temperature transport properties of double-gate Si MOSFETs with the Si well thickness in the range 7-17 nm. The devices were fabricated on silicon-on-insulator wafers utilizing wafer bonding,…
The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS…
The low-frequency noise figures of single-electron transistors (electrometers) of traditional planar and new stacked geometry were compared. We observed a correlation between the charge noise and the contact area of the transistor island…
We report the analysis of fluctuation conductivity (FLC) and pseudogap (D*) in Fe-based superconductor SmFeAsO0.85 with Tc = 55 K derived from resistivity experiments. In the FLC analysis distinct 2D-3D (MT-AL) crossover typical for…
The electron-hole symmetry in the structure "graphene - insulating substrate -semiconductor gate" is violated due to an asymmetrical drop of potential in the semiconductor gate under positive or negative biases. The gate voltage…
These compounds have long been known as promising thermoelectric materials. Recently it was revealed, that they also have unconventional electronic topology. This renewed interest to the investigation of their transport properties. In order…
A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while keeping constant…
We investigate the noise in single layer graphene devices from equilibrium to far from equilibrium and found that the 1/f noise shows an anomalous dependence on the source-drain bias voltage (VSD). While the Hooge relation is not the case…
We calculate the temperature, density, and parallel magnetic field dependence of low temperature electronic resistivity in 2D high-mobility Si/SiGe quantum structures, assuming the conductivity limiting mechanism to be carrier scattering by…
We investigate low-temperature and low-voltage-bias charge transport in a superconducting Al single electron transistor in a dissipating environment, realized as on-chip high-ohmic Cr microstrips. In our samples with relatively large…
A single electron transistor based on Al-AlO_x-Nb tunnel junctions was fabricated by shadow evaporation and in situ barrier formation. Its output current noise was measured, using a transimpedance amplifier setup, as a function of bias…
The $\rm Fe_{1+y}Te_{1-x}Se_x$\ single crystals with the various Se/Te ratios were studied by the microwave absorption and direct current resistivity measurements. The comparison of the microwave absorption data and the resistivity versus…
We investigate a hybrid structure consisting of $20\pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby…
We determined the interface state density ($D_{\rm it}$) distributions in the vicinity of the conduction band edge in silicon carbide (SiC) metal-oxide-semiconductor (MOS) structures by reproducing the experimental current-voltage…
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability…
Defect engineering in two-dimensional semiconductors has been exploited to tune the optoelectronic properties and introduce new quantum states in the band gap. Chalcogen vacancies in transition metal dichalcogenides in particular have been…