Related papers: Charge Offset Stability in Si Single Electron Devi…
We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy…
The dephasing effect of metallic gates on electrons moving in one quasi--one--dimensional diffusive wires is analyzed. The incomplete screening in this geometry implies that the effect of the gate can be described, at high energies or…
In this letter, we report the operation of AlGaN/GaN HEMTs with Pd gates in air over a wide temperature range from 22$^\circ$C to 500$^\circ$C. The variation in the threshold voltage ($V_{th}$) is less than 1$\%$ over the entire temperature…
The crystal structure of Fe3O4 below the 122 K Verwey transition has been refined using high-resolution X-ray and neutron powder diffraction data. The refinements give direct evidence for charge ordering (CO) over four independent…
Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…
Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET),…
We have observed reproducible conductance fluctuations at low temperature in a small GaAs:Si wire driven across the Anderson transition by the application of a gate voltage. We analyse quantitatively the log-normal conductance statistics in…
A mechanical analogy is used to analyze the interaction between the magnetic field, electric current and deformation of interfaces in liquid metal batteries. It is found that, during charging or discharging, a sufficiently large battery is…
We investigate the impact of structural disorder on electronic transport in gold nanocrystal monolayers. Arrays ranging from void-filled networks to well-ordered superlattices show clear voltage thresholds V_T due to Coulomb blockade, and…
$\beta$-Fe$_2$PO$_5$ is an emerging room-temperature d-wave altermagnet featuring quasi-one-dimensional crystal and magnetic structures, orthogonal transport channels for opposite spins, and large band spin splitting, which is a promising…
Effects of the single-electron tunneling and the Coulomb blockade in a cluster structure (the molecular transistor) are investigated theoretically. In the framework of the particle-in-a-box model for the spherical and disk-shaped gold…
In electric double layer transistors with SrTiO3 single crystals, we found distinct differences between electrostatic charge accumulation and electrochemical reaction depending on bias voltages. In contrast to the reversible electrostatic…
We perform electrical field effect measurements at 4 K on insulating granular aluminium thin films. When the samples size is reduced below 100 micrometers, reproducible and stable conductance fluctuations are seen as a function of the gate…
The influence of an impurity atom on the electrostatic behaviour of a Single Molecular Transistor (SMT) was investigated through Ab-initio calculations in a double-gated geometry. The charge stability diagram carries unique signature of the…
We study the Anderson orthogonality catastrophe (AOC) in finite conductors with diffusive disorder. The disorder averaged logarithm of $\chi$, the overlap between the ground states before and after adding a static impurity, is found to…
We studied transport through ultra-small Si quantum dot transistors fabricated from silicon-on-insulator wafers. At high temperatures, 4K<T<100K, the devices show single-electron or single-hole transport through the lithographically defined…
We have studied the metallic behaviour in low density GaAs hole systems, and Si electron systems, close to the apparent two-dimensional metal-insulator transition. Two observations suggest a semi-classical origin for the metallic-like…
Charge noise is a major obstacle to improved gate fidelities in silicon spin qubits. Numerous methods exist to mitigate charge noise, including improving device fabrication, dynamical decoupling, and real-time parameter estimation. In this…
Altermagnets break time-reversal symmetry and their spin-orbit coupling (SOC) allow for an anomalous Hall effect (AHE) that depends on the direction of the N\'eel ordering vector. The AHE and the ferromagnetic spin moment share the same…