Related papers: Efficient spin injection and giant magnetoresistan…
A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at…
In this review, we outline the important results on the resistivity encountered by an electron in magnetically ordered materials. The mechanism of the collision between the electron and the lattice spins is shown. Experiments on the spin…
We consider charge transport properties in realistic, fabricable, Ferromagnet/Superconductor spin valves having a layered structure $F_1/N/F_2/S$, where $F_1$ and $F_2$ denote the ferromagnets, $S$ the superconductor, and $N$ the normal…
This chapter presents a review on spin transfer torque in magnetic tunnel junctions. In the first part, we propose an overview of experimental and theoretical studies addressing current-induced magnetization excitations in magnetic tunnel…
Weyl semimetals are playing a major role in condensed matter physics due to exotic topological properties, and their coexistence with ferromagnetism may lead to enhanced spin-related phenomena. Here, the inverse spin Hall effect (ISHE) in…
We report on spin polarization reduction by incoherent tunneling in realistic single crystal Co2FeAl/MgO/Co50Fe50 magnetic tunnel junctions (MTJ) compared to reference Fe/MgO/Fe. A large density of misfit dislocations in the Heusler based…
The minority-spin Fe/MgO interface states are at the Fermi level in density functional theory (DFT), but experimental evidence and GW calculations place them slightly higher in energy. This small shift can strongly influence tunneling…
Half-metallic Heusler alloy compounds with Curie temperatures above room temperature are suitable candidate electrode materials for injecting large spin-polarised charge carriers into the semiconducting barriers at the ferromagnet…
During the study of resistive switching devices, researchers have found that the influence of the insertion layer cannot be ignored. Many reports have confirmed that the appropriate insertion layer can significantly improve the performance…
Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of…
We present our results of the effect of Fe intercalation on the structural, transport and magnetic properties of 1T-VSe2. Intercalation of iron, suppresses the 110K charge density wave (CDW) transition of the 1T-VSe2. For the higher…
We theoretically investigate spin-dependent transport in a TMD-based vertical spin valve, taking WSe$_2$ as a representative example. Using effective Hamiltonians for the heterostructure and the Landauer formula, we derive the transmission…
An in situ measurement of spin transport in a graphene nonlocal spin valve is used to quantify the spin current absorbed by a small (250 nm $\times$ 750 nm) metallic island. The experiment allows for successive depositions of either Fe or…
We study the spin-transfer torque and magnetoresistance of a ferromagnet$\mid$superconductor$\mid$ferromagnet spin-valve, allowing for an arbitrary magnetization misorientation and treating both s-wave and d-wave symmetries of the…
Magnetic tunnel junctions with the layer sequence Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe were fabricated by magnetron sputtering at room temperature (RT). The samples exhibit a large inverse tunneling magnetoresistance (TMR) effect of up to…
In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnel barrier between Al and Co electrodes, we observed large magnetoresistance (MR). The bias dependence shows an abrupt increase of MR ratio in high bias voltage, which is…
Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a…
Obtaining highly spin-polarized currents in molecular junctions is crucial and desirable for nanoscale spintronics devices. Motivated by our recent symmetry-based theoretical argument for complete blocking of one spin conductance channel in…
We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As…
Using density functional theory calculations, we demonstrate that the effect of anisotropic magnetoresistance (AMR) can be enhanced by orders of magnitude with respect to conventional bulk ferromagnets in junctions containing molecules…