Related papers: Charge Pumping Through a Single Donor Atom
As an alternative to commonly used electrical methods, we have investigated the optical pumping of charged exciton complexes addressing impurity related transitions with photons of the appropriate energy. Under these conditions, we…
Using a tight-binding model, we study one-parameter charge pumping in a one-dimensional system of non-interacting electrons. An oscillating potential is applied at one site while a static potential is applied in a different region. Using…
We investigate a hybrid structure consisting of $20\pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby…
We show that in excitonic insulators with $s$-wave electron-hole pairing, an applied electric field (either pulsed or static) can induce a $p$-wave component to the order parameter, and further drive it to rotate in the $s+ip$ plane,…
Single electron charging in an individual InAs quantum dot was observed by electrostatic force measurements with an atomic force microscope (AFM). The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were…
Precise and reproducible current generation is key to realize quantum current standards in metrology. A promising candidate is a tunable-barrier single-charge pump, which can accurately transfer single charges one by one with an error rate…
This paper investigates a scheme for quantized charge pumping based on single-parameter modulation. The device was realized in an AlGaAs-GaAs gated nanowire. We find a remarkable robustness of the quantized regime against variations in the…
In this Letter, we study the transient electron transfer phenomena of single-electron devices with alternating external gate voltages. We obtain a high frequency limit for pumping electrons one at a time in single-electron devices. Also, we…
Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most…
Transport of charge carriers can be controlled by doping through chemical and physical means. Unlike chemical doping, physical doping is carried out by a special technique through gate voltages in a field-effect transistor geometry. This…
Electron pumps capable of delivering a current higher than 100pA with sufficient accuracy are likely to become the direct mise en pratique of the possible new quantum definition of the ampere. Furthermore, they are essential for closing the…
Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and…
A possibility to perform single-electron computing without dissipation in the array of tunnel-coupled quantum dots is studied theoretically, taking the spin gate NOT (inverter) as an example. It is shown that the logical operation can be…
We present a theoretical study of quantum charge pumping with a single ac gate applied to graphene nanoribbons and carbon nanotubes operating with low resistance contacts. By combining Floquet theory with Green's function formalism, we show…
A well-characterised sample of silicon tunable-barrier electron pump has been operated at a frequency of 2 GHz using a custom drive waveform, generating a pump current of 320 pA. Precision measurements of the current were made as a function…
We propose a new mode of operation of an electron pump consisting of two weakly coupled quantum dots connected to reservoirs. An electron can be transferred within the device at zero bias voltage when it is subjected to electromagnetic…
We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the…
Dopant atoms are ubiquitous in semiconductor technologies, providing the tailored electronic properties that underpin the modern digital information era. Harnessing the quantum nature of these atomic-scale objects represents a new and…
Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part to another. For example, in a quantum computer[1] decoherence and circuit complexity…
Using a non-contact atomic force microscope we track and manipulate the position of single electrons confined to atomic structures engineered from silicon dangling bonds (DBs) on the hydrogen terminated silicon surface. By varying the…