Related papers: Charge Pumping Through a Single Donor Atom
We consider adiabatic pumping of electrons through a quantum dot. There are two ways to operate the pump: to create a dc current ${\bar I}$ or to create a dc voltage ${\bar V}$. We demonstrate that, for very slow pumping, ${\bar I}$ and…
The ability to transport single electrons on a quantum dot array dramatically increases the freedom in designing quantum computation schemes that can be implemented on solid-state devices. So far, however, routing schemes to precisely…
Here we report the direct observation of single electron charging of a single atomic Dangling Bond (DB) on the H-Si(100) 2x1 surface. The tip of a scanning tunneling microscope is placed adjacent to the DB to serve as a single electron…
We report low frequency charge noise measurement on silicon substrates with different phosphorus doping densities. The measurements are performed with aluminum single electron transistors (SETs) at millikelvin temperatures where the…
We consider the adiabatic pumping of charge through a mesoscopic one dimensional wire in the presence of electron-electron interactions. A two-delta potential model is used to describe the wire, which allows to obtain exactly the scattering…
We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that…
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…
We studied transport through ultra-small Si quantum dot transistors fabricated from silicon-on-insulator wafers. At high temperatures, 4K<T<100K, the devices show single-electron or single-hole transport through the lithographically defined…
Semiconductor devices continue to press into the nanoscale regime, and new applications have emerged for which the quantum properties of dopant atoms act as the functional part of the device, underscoring the necessity to probe the quantum…
We propose a scheme for triggering a dissipation dominated highly efficient excitation transfer from a single photon wave packet to a single quantum emitter. This single photon induced optical pumping turns dominant dissipative processes,…
We describe a novel mechanism for charge pumping through tunnel-coupled quantum dots in the regime of strong Coulomb blockade. The quantum state of an additional electron within the structure is steered by changing the tunneling couplings…
We develop a new approach to electron transport in mesoscopic systems by using a particular single-particle basis. Although this basis generates redundant many-particle amplitudes, it greatly simplifies the treatment. By using our method…
Acceptor dopant atoms in silicon have recently been identified as compelling candidates for spin-based quantum technologies. Interest in acceptor qubits ultimately derives from the properties of acceptor bound holes, where spin-orbit…
Precise manipulation of individual charge carriers in nanoelectronic circuits underpins practical applications of their most basic quantum property --- the universality and invariance of the elementary charge. A charge pump generates a net…
Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined…
A single-electron latch is a device that can be used as a building block for Quantum-dot Cellular Automata (QCA) circuits. It consists of three nanoscale metal "dots" connected in series by tunnel junctions; charging of the dots is…
The ability to apply GHz frequencies to control the quantum state of a single $P$ atom is an essential requirement for the fast gate pulsing needed for qubit control in donor based silicon quantum computation. Here we demonstrate this with…
We study non-adiabatic two-parameter charge and spin pumping through a single-level quantum dot with Coulomb interaction. For the limit of weak tunnel coupling and in the regime of pumping frequencies up to the tunneling rates, $\Omega…
We study the injection mechanism of a single electron from a static quantum dot into a moving quantum dot created in a long depleted channel with surface acoustic waves (SAWs). We demonstrate that such a process is characterized by an…
Surface acoustic waves (SAWs) are a reliable solution to transport single electrons with precision in piezoelectric semiconductor devices. Recently, highly efficient single-electron transport with a strongly compressed single-cycle acoustic…