Related papers: Intrinsic Spin Hall Effect at Oxide Interfaces: a …
Changes dopant ion concentrations in the sides of a symmetric quantum well are known to create a random Rashba-type spin-orbit coupling. Here we demonstrate that, as a consequence, a finite size spin-Hall effect is also present. Our…
We study intrinsic spin Hall effect in p-type GaAs quantum well structure described by Luttinger Hamiltonian and a Rashba spin-orbit coupling arising from the structural inversion symmetry breaking. The Rashba term induces an energy level…
We investigate spin transport of heavy holes in III-V semiconductor quantum wells in the presence of spin-orbit coupling of the Rashba type due to structure-inversion asymmetry. Similarly to the case of electrons, the longitudinal spin…
The Rashba spin-orbit coupling arising from structure inversion asymmetry couples spin and momentum degrees of freedom providing a suitable (and very intensively investigated) environment for spintronic effects and devices. Here we show…
We use numerical simulations to investigate the spin Hall effect in quantum wires in the presence of both Rashba and Dresselhaus spin-orbit coupling. We find that the intrinsic spin Hall effect is highly anisotropic with respect to the…
Intrinsic and extrinsic spin Hall effects are considered together on an equal theoretical footing for the Rashba spin-orbit coupling in two-dimensional (2D) electron and hole systems, using the diagrammatic method for calculating the spin…
We investigate the spin-orbit (s-o) interaction in two-dimensional electron gases (2DEGs) in quantum wells with two subbands. From the $8\times 8$ Kane model, we derive a new inter-subband-induced s-o term which resembles the functional…
In materials lacking inversion symmetry, the spin-orbit coupling enables the direct connection between the electron's spin and its linear momentum, a phenomenon called inverse spin galvanic effect. In magnetic materials, this effect…
In semiconductors with inversion asymmetry, spin-orbit coupling gives rise to the well-known Dresselhaus and Rashba effects. If one considers quantum wells with two or more conduction subbands, an additional, intersubband-induced spin-orbit…
We investigate the intrinsic spin Hall effect in two-dimensional electron gases in quantum wells with two subbands, where a new intersubband-induced spin-orbit coupling is operative. The bulk spin Hall conductivity $\sigma^z_{xy}$ is…
We report on a comparative numerical study of the spin Hall conductivity in two-dimensions for three different spin-orbit interaction models; the standard k-linear Rashba model, the k-cubic Rashba model that describes two-dimensional hole…
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where…
We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity…
In the absence of an external field, the Rashba spin-orbit interaction (SOI) in a two-dimensional electron gas in a semiconductor quantum well arises entirely from the screened electrostatic potential of ionized donors. We adjust the wave…
Recently, we have found an additional spin-orbit (SO) interaction in quantum wells with two subbands [Phys. Rev. Lett. 99, 076603 (2007)]. This new SO term is non-zero even in symmetric geometries, as it arises from the intersubband…
We derive the ac spin-Hall conductivity $\sigma_{\rm sH}(\omega)$ of two-dimensional spin-orbit coupled systems interacting with dispersionless phonons of frequency $\omega_0$. For the linear Rashba model we show that the electron-phonon…
The intrinsic spin Hall conductivity of a two-dimensional gas confined to SrTiO$_3$, such as occurs at an LaAlO$_3$/SrTiO$_3$ interface, is calculated from the Kubo formula. The effect of strain in the [001] (normal to the quantum well…
The effective linear coupling coefficient and the total spin-splitting are calculated in Ga- and N- face InGaN quantum wells. Alloy content, geometry, and gate voltage affect an internal field and an electron density distribution in the…
We calculate the spin Hall conductivity driven by Rashba spin-orbit interaction in $p$-type two-dimensional semiconductors in the presence of a perpendicular magnetic field. For a highly confined quantum well, the system is described by a…
Spin-orbit interaction in semiconductor structures with broken space inversion symmetry leads to spin splitting of electron and hole states even in the absence of magnetic field. We discover that, beyond the Rashba and Dresselhaus…