Strain Engineering of the Intrinsic Spin Hall Conductivity in a SrTiO$_3$ Quantum Well
Mesoscale and Nanoscale Physics
2019-01-09 v1
Abstract
The intrinsic spin Hall conductivity of a two-dimensional gas confined to SrTiO, such as occurs at an LaAlO/SrTiO interface, is calculated from the Kubo formula. The effect of strain in the [001] (normal to the quantum well direction) and the [111] direction is incorporated into a full tight-binding Hamiltonian. We show that the spin-charge conversion ratio can be significantly altered through strain and gate voltage by tuning the chemical potential. Strain direction is also a significant factor in the spin Hall response as this direction affects the alignment of the conduction bands.
Keywords
Cite
@article{arxiv.1804.00061,
title = {Strain Engineering of the Intrinsic Spin Hall Conductivity in a SrTiO$_3$ Quantum Well},
author = {Cüneyt Şahin and Giovanni Vignale and Michael E. Flatté},
journal= {arXiv preprint arXiv:1804.00061},
year = {2019}
}
Comments
9 pages, 6 figures