Related papers: Mott Variable Range Hopping and Weak Antilocalizat…
High quality epitaxial Sr2IrO4 thin films with various thicknesses (9-300 nm) have been grown on SrTiO3 (001) substrates, and their electric transport properties have been investigated. All samples showed the expected insulating behavior…
We present a new method to obtain topological insulator Bi$_2$Se$_3$ thin films with a centimeter large lateral length. To produce amorphous Bi$_2$Se$_3$ thin films we have used a sequential flash-evaporation method at room temperature.…
Thin films are a prerequisite for application of the emergent exotic ground states in iridates that result from the interplay of strong spin-orbit coupling and electronic correlations. We report on pulsed laser deposition of…
Spin orbit assisted Mott insulators such as sodium iridate (Na$_2$IrO$_3$) have been an important subject of study in the recent years. In these materials, the interplay of electronic correlations, spin-orbit coupling, crystal field effects…
The behavior of a disordered amorphous thin film of superconducting Indium Oxide has been studied as a function of temperature and magnetic field applied perpendicular to its plane. A superconductor-insulator transition has been observed,…
Electron transport properties of a topological insulator Bi$_2$Se$_3$ thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are…
We study Na2IrO3 by ARPES, optics, and band structure calculations in the local-density approximation (LDA). The weak dispersion of the Ir 5d-t2g manifold highlights the importance of structural distortions and spin-orbit coupling (SO) in…
Controlling the Mott transition through strain engineering is crucial for advancing the development and application of memristive and neuromorphic computing devices. Yet, Mott insulators are heterogeneous due to intrinsic phase boundaries…
We report evolution of the two-dimensional electron gas behavior at the NdAlO3/SrTiO3 heterointerfaces with varying thicknesses of the NdAlO3 overlayer. The samples with a thicker NdAlO3 show strong localizations at low temperatures and the…
Electron states with the spin-momentum-locked Dirac dispersion at the surface of a three-dimensional (3D) topological insulator are known to lead to weak antilocalization (WAL), i.e. low temperature and low-magnetic field quantum…
Strong spin-orbit coupling in topological insulators results in the ubiquitously observed weak antilocalization feature in their magnetoresistance. Here we present magnetoresistance measurements in ultra thin films of the topological…
Spin orbit coupling plays a non-perturbation effect in many recently developed novel fields including topological insulators and spin-orbit assistant Mott insulators. In this paper, strongly temperature-dependent spin orbit coupling,…
Honeycomb Na$_2$IrO$_3$ is a prototype spin-orbit Mott insulator and Kitaev magnet. We report a combined structural and electrical resistivity study of Na$_2$IrO$_3$ single crystals. Laue back-scattering diffraction indicates twinning with…
We have synthesized single crystals of Na_2IrO_3 and studied their structure, transport, magnetic, and thermal properties using powder x-ray diffraction (PXRD), electrical resistivity, isothermal magnetization M versus magnetic field H,…
Metal-insulator transition is observed in the La0.8Sr0.2MnO3 thin films with thickness larger than 5 unit cells. Insulating phase at lower temperature appeared in the ultrathin films with thickness ranging from 6 unit cells to 10 unit cells…
We have studied magnetoresistance and Hall effects for 1.8-nm-thick Pt films grown on a ferrimagnetic insulator Y3Fe5O12 in a wide temperature (0.46-300 K) and magnetic-field (-15-15 T) region. In the low-temperature regime where quantum…
The transport characteristics of a disordered MoS$_2$ nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The layered MoS$_2$ nanoflake is exfoliated from a bulk MoS$_2$ crystal and the conductance…
Recently, a logarithmic decrease of conductivity has been observed in topological insulators at low temperatures, implying a tendency of localization of surface electrons. Here, we report quantum transport experiments on the topological…
The in-plane magnetoresistance (MR) in La2-xSrxCuO4 films with 0.03 < x < 0.05 has been studied in the temperature range 1.6 K to 100 K, and in magnetic fields up to 14 T, parallel and perpendicular to the CuO2 planes. The behavior of the…
We report a transport study of ultrathin Bi2Se3 topological insulators with thickness from one quintuple layer to six quintuple layers grown by molecular beam epitaxy. At low temperatures, the film resistance increases logarithmically with…