Related papers: Mott Variable Range Hopping and Weak Antilocalizat…
We investigate the spin Hall magnetoresistance (SMR) at room temperature in thin film heterostructures of antiferromagnetic, insulating, (0001)-oriented alpha-Fe2O3 (hematite) and Pt. We measure their longitudinal and transverse…
Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ single crystals show gapless topological surface states and doping ($x$) with Vanadium allows to shift the chemical potential in the bulk band gap. Accordingly, the resistivity, carrier density, and mobility are…
A new class of materials termed topological insulators have been intensively investigated due to their unique Dirac surface state carrying dissipationless edge spin currents. Recently, it has been theoretically proposed that the three…
The low temperature (0.5-55 K) conduction of semicontinuous gold film vacuum deposited at T \approx 50 K is studied. The film is near the percolation threshold (thickness 3.25 nm). Its resistance is extremely sensitive to the applied…
We report the structure, magnetic, and thermal property measurements on single crystalline and polycrystalline samples of Ru substituted honeycomb lattice iridate Na$_2$Ir$_x$Ru$_{1-x}$O$_3$ (x = 0, 0.05, 0.1, 0.15, 0.2, 0.3, 0.5). The…
Recently Wagner et al. [Phys. Rev. Lett. Vol. 81, P. 3980 (1998)] proposed that Mott's original model be modified to incorporate a hopping barrier which depends on the misorientation between the spins of electrons at the initial and the…
The combination of magnetism and topology in magnetic topological insulators (MTIs) has led to unprecedented advancements of time reversal symmetry-breaking topological quantum physics in the past decade. Compared with the uniform films,…
The effect of Cr substitution in a SrRuO3 epitaxial thin film on SrTiO3 substrate was investigated by measuring the magnetic and transport properties and the electronic states. The ferromagnetic transition temperature of the SrRu0.9Cr0.1O3…
In recent years, excitation of surface phonon polaritons (SPhPs) in van der Waals materials received wide attention from the nanophotonics community. Alpha-phase Molybdenum trioxide ($\alpha$-MoO3), a naturally occurring biaxial hyperbolic…
We have conducted a highly precise doping controlled experiment on a thin film of the single layer cuprate Bi2Sr2-xLaxCuOy (x = 0.6), in order to observe the superconducting insulating transition (SIT). Sr2+/La3+ substitution (x = 0.6)…
Optical properties of refractory intermetallic thin films of Au$_{3}$Zr were experimentally investigated for the first time, which show distinctive plasmonic properties in the visible and near infrared region. The films were fabricated…
Using resonant x-ray diffraction, we observe an easy c-axis collinear antiferromagnetic structure for the bilayer Sr$_3$Ir$_2$O$_7$, a significant contrast to the single layer Sr$_2$IrO$_4$ with in-plane canted moments. Based on a…
An influence of the localization of itinerant electrons induced by correlated hopping on the electronic charge and heat transport is discussed for the lightly doped Mott insulator phase of the Falicov-Kimball model. The case of strongly…
We apply the finite-temperature variational cluster approach to a strongly correlated and spin-orbit coupled model for four electrons (i.e. two holes) in the $t_{2g}$ subshell. We focus on parameters suitable for antiferromagnetic Mott…
Electrical conductivity, Hall effect and magnetoresistance of In$_2$O$_3$:Sn thin films deposited on a glass substrates at different temperatures and oxygen pressures, as well as the films treated in a hydrogen plasma, have been…
We grew single-crystal thin films of a topological crystalline insulator (TCI) SnTe with a smooth surface at the atomic scale by molecular beam epitaxy (MBE). In the magnetoresistance (MR) measurement, we observed both positive and negative…
The negative magnetoresistance due to weak localization is investigated in the two-dimensional metallic state of Si-MOS structures for high conductance values between 35 and 120 e^2/h. The extracted phase coherence time is equal to the…
We show that a number of transport properties in topological insulator (TI) Bi2Se3 exhibit striking thickness-dependences over a range of up to five orders of thickness (3 nm - 170 \mu m). Volume carrier density decreased with thickness,…
Thin films of the topological insulator (BiSb)$_2$Te$_3$ oriented along the [0001] direction were grown via molecular beam epitaxy on substrates of Al$_2$O$_3$ (0001) and MgF$_2$ (110) single crystals, as well as on an epitaxial thin film…
On the basis of the Kubo-Luttinger linear response theory combined with the scaling theory of Anderson localization predicting the energy dependence of localization length near the mobility edge, we have studied the thermoelectric response…