Related papers: Mott Variable Range Hopping and Weak Antilocalizat…
A $t_{2g}^5$ system with a honeycomb lattice structure such as Na$_2$IrO$_3$ was firstly proposed as a topological insulator even though Na$_2$IrO$_3$ and its isostructural materials in nature have been turned out to be a Mott insulator…
Magnetic doping with transition metal ions is the most widely used approach to break timereversal symmetry in a topological insulator, a prerequisite for unlocking the TIs exotic potential. Recently, we reported the doping of Bi2Te3 thin…
Al2O3 thin films have been deposited at substrate temperatures between 500{\deg}C to 600{\deg}C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films…
Electronic transport near the insulator-metal transition is investigated in the molecular beam epitaxy-grown SrTiO3/Nd1-xTiO3/SrTiO3 heterostructures using temperature dependent magnetotransport measurements. It was found that Nd-vacancies…
Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI…
Topological insulators are insulating in the bulk but possess spin-momentum locked metallic surface states protected by time-reversal symmetry. The existence of these surface states has been confirmed by angle-resolved photoemission…
The structural crystal features, electron transport and magnetotransport of the epitaxial strontium iridate (SrIrO$_3$) and iridate/manganite SrIrO$_3$/La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructure have been investigated. The influence of…
The temperature dependence of the resistance R(T) of ultrathin quench-condensed films of Ag, Bi, Pb and Pd has been investigated. In the most resistive films, R(T)=Roexp(To/T)^x, where x=0.75. Surprisingly, the exponent x was found to be…
Electric field-induced giant resistive switching triggered by insulator-to-metal transition (IMT) is one of the promising approaches for developing a new class of electronics often referred to as Mottronics. Achieving this resistive…
We evaluate quantum corrections to conductivity in an electrically gated thin film of a three-dimensional (3D) topological insulator (TI). We derive approximate analytical expressions for the low-field magnetoresistance as a function of…
We report on giant positive magnetoresistance effect observed in VOx thin films, epitaxially grown on SrTiO3 substrate. The MR effect depends strongly on temperature and oxygen content and is anisotropic. At low temperatures its magnitude…
Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and…
We report that thin films of a prototype topological insulator, Bi$_{2}$Se$_{3}$, can be epitaxially grown onto the (0001) surface of BaFe$_{12}$O$_{19}$(BaM), a magnetic insulator with high Curie temperature and large perpendicular…
Thin films of topological insulator Bi_2Se_3 were deposited directly on insulating ferromagnetic EuS. Unusual negative magnetoresistance was observed near the zero field below the Curie temperature (T_C), resembling the weak localization…
Magneto-transport properties of SrIrO$_3$ thin films epitaxially grown on SrTiO$_3$, using reactive RF sputtering, are investigated. A large anisotropy between the in-plane and the out-of-plane resistivities is found, as well as a signature…
We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi2Se3 and (Bi,Sb)2Te3 thin…
In chalcogenide topological insulator materials, two types of magneto-resistance (MR) effects are widely discussed: a positive MR dip around zero magnetic field associated with the weak antilocalization (WAL) effect and a linear MR effect…
Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinned down to a few nanometers, the hybridization between the…
We investigated the nature of transport and magnetic properties in SrIr0.5Ru0.5O3, (SIRO) which has characteristics intermediate between a correlated non-Fermi liquid state and an itinerant Fermi liquid state, by growing perovskite thin…
The temperature dependence of dark conductivity at low temperatures (300-15 K) was studied on a wide microstructural range of well-characterized highly crystallized single phase undoped microcrystalline silicon samples. Our study reveals…