Related papers: III-V Gate-all-around Nanowire MOSFET Process Tech…

The atomic-level structural detail and the quantum effects are becoming crucial to device performance as the emerging advanced transistors, representatively GAAFETs, are scaling down towards sub-3nm nodes. However, a multiscale simulation…

Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable…

Using a tight-binding mode-space NEGF technique, we explore the essential physics, design and performance potential of the III-V core-shell (CS) nanowire (NW) heterojunction TFET. The CS TFET line-tunneling current increases significantly…

A physics-based compact model for silicon gate-all-around (GAA) nanowire tunneling FETs (NW-tFETs) with good accuracy has been developed by considering Phonon-Assisted Tunneling (PAT) and transition from Quantum Capacitance Limit (QCL) to…

A nano-fabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is…

Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor…

We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer layers. We show that low loss superconducting resonators with an…

Inspired by recent experimental realizations and theoretical simulations of thin silicon nanowire-based devices, we perform predictive first-principles simulations of junctionless gated Si nanowire transistors. Our primary predictions are…

Semiconductor nanowires have shown great potential for enabling ultra-compact lasers for integrated photonics platforms. Despite the impressive progress in developing nanowire lasers, their integration into Si photonics platforms remains…

Achieving high crystalline quality Ge$_{1-x}$Sn$_{x}$ semiconductors at Sn content exceeding 10\% is quintessential to implementing the long sought-after silicon-compatible mid-infrared photonics. Herein, by using sub-20 nm Ge nanowires as…

The current work explores a geometrically engineered dual gate GaAs nanowire FET with state of the art miniaturized dimensions for high performance charge qubit operation at room temperature. Relevant gate voltages in such device can create…

Scaling information bits to ever smaller dimensions is a dominant drive for information technology (IT). Nanostructured phase change material emerges as a key player in the current green-IT endeavor with low power consumption, functional…

Two-dimensional (2D) semiconductors have emerged as leading candidates for the development of low-power and multifunctional computing applications, thanks to their qualities such as layer-dependent band gap tunability, high carrier…

Magnonics is a rapidly growing field, attracting much attention for its potential applications in data transport and processing. Many individual magnonic devices have been proposed and realized in laboratories. However, an integrated…

Capacitance-voltage characteristics of individual germanium nanowire field effect transistors were directly measured and used to assess carrier mobility in nanowires for the first time; thereby removing uncertainties in calculated mobility…

Reversible logic has attracted substantial interest due to its low power consumption which is the main concern of low power VLSI circuit design. In this paper, a novel 4x4 reversible gate called inventive gate has been introduced and using…

Gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology node. In particular, the junctionless nanowire transistors…

Semiconducting nanowires (NWs) are a versatile, highly tunable material platform at the heart of many new developments in nanoscale and quantum physics. Here, we demonstrate charge pumping, i.e., the controlled transport of individual…

Nanofluidic ionic transistors typically require gate voltages above 1 V and operate only at sub millimolar ionic strengths, limiting their biocompatible applications. We demonstrate ionic transistors consisting of single sub 10 nm nanopores…

Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si…