Related papers: Electronic transport in two dimensional Si:P $\del…
Undoped and Si-doped GaN films were grown epitaxially on sapphire by reactive rf sputtering of GaAs (and Si) in Ar-N2 mixture. The resistivity of undoped GaN film grown at 100% N2 was ~2 x 105 {\Omega} cm, which reduced to ~1 {\Omega} cm in…
We consider the problem of electron transport along a one-dimensional disordered multiple-scattering conductor, and study the electron density for all the electronic levels. A model is proposed for the reduced density matrix of the system…
The advances in the growth techniques provide numerous scope to explore the possibilities of new 2D materials for potential applications. With the aid of first-principle calculations we show that 2D Na can be a new addition to the family of…
We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing…
Two-dimensional (2D) semiconductors have demonstrated great potential for next-generation electronics and optoelectronics. An important property for these applications is the phonon-limited charge carrier mobility. The common approach to…
The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are…
We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms in this increasingly important materials…
Using the semi-classical Boltzmann theory, we calculate the conductivity as function of the carrier density. As usually, we include the scattering from charged impurities, but conclude that the estimated impurity density is too low in order…
In this Letter, four-point magnetotransport of high mobility InGaAs/InP heterointerfaces is measured from 1.6 K to 300 K and from 0 to 15 T, and an analysis is shown whereby the mobility and density of the two-dimensional (2D) accumulation…
Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different…
The correlation between the transport properties and structural degrees of freedom of conducting polymers is a central concern in both practical applications and scientific research. In this study, we demonstrated the existence of…
For applications to sensor design, the product nxmu of the electron density n and the mobility mu is a key parameter to be optimized for enhanced device sensitivity. We model the carrier mobility in a two dimensional electron gas (2DEG)…
We consider the problem of electron transport across a quasi-one-dimensional disordered multiply-scattering medium, and study the statistical properties of the electron density inside the system. In the physical setup that we contemplate,…
Employing flux-grown single crystal WSe$_2$, we report charge carrier scattering behaviors measured in $h$-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and…
The room temperature carrier mobility in atomically thin 2D materials is usually far below the intrinsic limit imposed by phonon scattering as a result of scattering by remote charged impurities in its environment. We simulate the charged…
We theoretically consider the carrier density tuned (apparent) two-dimensional (2D) metal-insulator-transition (MIT) in semiconductor heterostructure-based 2D carrier systems as arising from a classical percolation phenomenon in the…
We present a first-principles approach to compute the transport properties of 2D materials in an accurate and automated framework. We use density-functional perturbation theory in the appropriate bidimensional setup with open-boundary…
We theoretically consider the carrier density dependence of low-temperature electrical conductivity in high-quality and low-disorder two-dimensional (2D) `metallic' electronic systems such as 2D GaAs electron or hole quantum wells or gated…
The electrical transport properties of amorphous Bi films prepared by sequential quench deposition have been studied in situ. A superconductor-insulator (S-I) transition was observed as the film was made increasingly thicker, consistent…
The transition-metal dichalcogenides have attracted a lot of attention as a possible stepping-stone toward atomically thin and flexible field-effect transistors. One key parameter to describe the charge transport is the time between two…