Related papers: Electronic transport in two dimensional Si:P $\del…
Over the last few years, $ab~initio$ methods have become an increasingly popular tool to evaluate intrinsic carrier transport properties in 2D materials. The lack of experimental information, and the progress made in the development of DFT…
Recent experiments in silicon MOSFETs indicate that the Hall coefficient is independent of magnetic field applied at a small angle with respect to the plane. Below a scattering between spin-up and spin-down carriers is considered to be the…
Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean device fabrication process using a precious-metal protective…
Two-dimensional (2D) materials have captured the attention of the scientific community due to the wide range of unique properties at nanometer-scale thicknesses. While significant exploratory research in 2D materials has been achieved, the…
A new mechanism for charge carrier scattering in transition-metal dichalcogenide monolayers is proposed on the basis of the theory of two-dimensional nonlocal screening developed for the dielectric function of thin-layer insulating…
These compounds have long been known as promising thermoelectric materials. Recently it was revealed, that they also have unconventional electronic topology. This renewed interest to the investigation of their transport properties. In order…
Transport measurements of the two-dimensional electron gas (2DEG) at the LaAlO$_3$/SrTiO$_3$ interface have found a density of carriers much lower than expected from the "polar catastrophe" arguments. From a detail density-functional study,…
We discuss the effect of the dielectric environment (insulators and metal gates) on electronic transport in two-dimensional (2D) transition metal dichalcogenides (TMD) monolayers. We employ well-known ab initio methods to calculate the…
We calculate the temperature, density, and parallel magnetic field dependence of low temperature electronic resistivity in 2D high-mobility Si/SiGe quantum structures, assuming the conductivity limiting mechanism to be carrier scattering by…
The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field, and were…
Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here,…
Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision. This approach to device fabrication has made Si:P monolayer…
In this work, the origin of the low free electron mobility in SiC MOSFETs is investigated using the scattering theory of two-dimensional electron gases. We first establish that neither phonon scattering nor Coulomb scattering can be the…
We calculate using the Boltzmann transport theory the density dependent mobility of two-dimensional (2D) electrons in GaAs, SiGe and AlAs quantum wells as well as of 2D holes in GaAs quantum wells. The goal is to precisely understand the…
We present an overview of the measured transport properties of the two dimensional electron fluids in high mobility semiconductor devices with low electron densities, and of some of the theories that have been proposed to account for them.…
Motivated by recent experiments on Si/SiGe quantum wells with a co-design of high electron mobility and large valley splitting [B. Paquelet Wuetz, et al., Nature Communications 14, 1385 (2023); D. D. Esposti, et al., arXiv:2309.02832],…
We report on the growth and electrical characterization of a series of two-dimensional hole systems (2DHSs) used to study the density dependence of low temperature mobility in 20 nm GaAs/AlGaAs quantum wells. The hole density was controlled…
Iron-based high temperature superconductivity develops when the `parent' antiferromagnetic/orthorhombic phase is suppressed, typically by introduction of dopant atoms. But their impact on atomic-scale electronic structure, while in theory…
We investigate the semiclassical electronic transport properties of the bilayer silicene-like system in the presence of charged impurity. The trigonal warping due to the interlayer hopping, and its effect to the band structure of bilayer…
The normal-state charge transport is studied systematically in high-quality single crystals of BaFe$_2$(As$_{1-x}$P$_x$)$_2$ ($0 \leq x \leq 0.71$). By substituting isovalent P for As, the spin-density-wave (SDW) state is suppressed and the…