Related papers: Temperature stable 1.3 {\mu}m emission from GaAs
We present here a comprehensive study of the light yield of primary and secondary scintillations produced in gaseous and liquid Ar in the near infrared (NIR) and visible region, at cryogenic temperatures. The measurements were performed…
We present a detailed characterization of the X-ray spectral properties of 761 type 1 AGN, selected from a cross-correlation of the SDSS DR5 quasar catalogue and the incremental version of the second XMM-Newton serendipitous X-ray source…
The thermal conductivity of suspended single-layer graphene was measured as a function of temperature using Raman scattering spectroscopy on clean samples prepared directly on a prepatterned substrate by mechanical exfoliation without…
We measure transport through a Ga[Al]As heterostructure at temperatures between 0.1 K and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscous effects in the two-dimensional electron gas arise. To…
This paper reports on the deposition and photoluminescence of amorphous and crystalline thin films of zinc gallium oxide with Ga:Zn atomic ratio varied between 0.3 and 5.7. The films are prepared by reactive direct current magnetron…
Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence,…
The carrier emission efficiency of light emitting diodes is of fundamental importance for many technological applications, including the performance of GaN and other semiconductor photocathodes. We have measured the evolution of the emitted…
We perform a numerical analysis of mid-infrared photoluminescence emitted by praseodymium (III) doped chalcogenide selenide glass pumped at near-infrared wavelengths. The results obtained show that an effective inversion of level…
We report the observation of transverse electric polarized electroluminescence from InAs/AlInAs quantum dash quantum cascade structures up to room temperature. The emission is attributed to the electric field confined along the shortest…
In this work, we report the use of commercial Gallium Nitride (GaN) power electronics to precisely switch complex distributed loads, such as electron lenses and deflectors, without impedance matching. Depending on the chosen GaN field…
We present measurements of the electron temperature using gate defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a…
The heat transport in heavy-doped n-GaAs has been investigated at temperatures T=300 K and 77 K using the irradiation of the metal-semiconductor contact by modulated CO_{2}-laser radiation. It is shown this approach giving an opportunity to…
We present the experimental generation of light with directly observable close-to ideal thermal statistical properties. The thermal light state is prepared using a spontaneous Raman emission in a warm atomic vapor. The photon number…
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a single growth process has been found to significantly improve…
We report ultrafast transient-grating measurements of crystals of the three-dimensional Dirac semimetal cadmium arsenide, Cd3As2, at both room temperature and 80 K. After photoexcitation with 1.5-eV photons, charge-carriers relax by two…
$\beta$-Ga$_2$O$_3$ is a semiconductor with bandgap in the deep-UV ~ 5 eV. Due to its strong phonon-hole coupling, holes are self-trapped inhibiting bandgap luminescence at the deep-UV. In contrast, the self-trapped holes (STH) can exhibit…
Grazing incidence fast atom diffraction at crystal surfaces (GIFAD or FAD) has demonstrated coherent diffraction both at effective energies close to one eV ($\lambda_\perp\approx$ 14 pm for He) and at elevated surface temperatures offering…
An indium arsenide photovoltaic cell with gold front contacts is designed for use in a near-field thermophotovoltaic (NF-TPV) device consisting of millimeter-size surfaces separated by a nanosize vacuum gap. The device operates with a doped…
We determined the complex dielectric functions of $\varepsilon$-Ga$_2$O$_3$ using optical transmittance and reflectance spectroscopies at temperatures from 10 K to room temperature. The measured dielectric-function spectra reveal distinct…
In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost.…