Related papers: Temperature stable 1.3 {\mu}m emission from GaAs
In this article, we show that the variation of the wavelength of a non-pumped light-emitting diode (LED) is practically linear with temperature, a novel consequence of Varshni's widely accepted empirical expression. This formula models the…
Quantum dots (QDs) based on III-nitride semiconductors are promising for single photon emission at non-cryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K…
We present results on electrically driven nanobeam photonic crystal cavities formed out of a lateral p-i-n junction in gallium arsenide. Despite their small conducting dimensions, nanobeams have robust electrical properties with high…
We develop a thermally tunable hybrid photonic platform comprising gallium arsenide (GaAs) photonic crystal cavities, silicon nitride (SiN$_x$) grating couplers and waveguides, and chromium (Cr) microheaters on an integrated photonic chip.…
We study the optical conductivity in the III-V diluted magnetic semiconductor GaMnAs and compare our calculations to available experimental data. Our model study is able to reproduce both qualitatively and quantitatively the observed…
Whispering gallery modes in GaAs disk resonators reach half a million of optical quality factor. These high Qs remain still well below the ultimate design limit set by bending losses. Here we investigate the origin of residual optical…
We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and x-ray tube energy. The material is a photoresistor and can be biased to collect either…
Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $\chi^{(2)}$ and $\chi^{(3)}$ coefficients, a high refractive index ($>3$),…
Thermal noise is a limiting factor in many high-precision optical experiments. A search is underway for novel optical materials with reduced thermal noise. One such pair of materials, gallium arsenide and aluminum-alloyed gallium arsenide…
Positron lifetime, Photoluminescence and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314ps lifetime component, attributed to $V_{Ga}$ related defect, was identified in the positron lifetime…
Due to its ultra-thin nature, the study of graphene quantum optoelectronics, like gate-dependent graphene Raman properties, is obscured by interactions with substrates and surroundings. For instance, the use of doped silicon with a capping…
Owing to its wide (3.4 eV) and direct-tunable band gap, gallium nitride (GaN) is an excellent material platform for UV photodetectors. GaN is also stable in radiation-rich and high-temperature environments, which makes photodetectors…
GaN defect based quantum emitters have recently gained attention as promising single photon sources for quantum information applications. However, dephasing processes, manifested as photoluminescence (PL) linewidth broadening, pose a…
We investigated the optical properties of epitaxial \textit{n}-type ZnO films grown on lattice-matched ScAlMgO$_4$ substrates. As the Ga doping concentration increased up to $6 \times 10^{20}$ cm$^{-3}$, the absorption edge showed a…
Gallium arsenide (GaAs) doped with erbium (Er), a material of interest for optoelectronics and quantum information, has been studied for decades. Yet the formation of Er luminescence centers in the semiconductor host and their properties…
Thermal radiative energy transport is essential for high-temperature energy harvesting technologies, including thermophotovoltaics (TPVs) and grid-scale thermal energy storage. However, the inherently low emissivity of conventional…
Graphene quality indicators obtained by Raman spectroscopy have been correlated to the structural changes of the graphene/Germanium interface as a function of in-vacuum thermal annealing. Specifically, it is found that graphene becomes…
Halide perovskites are a promising optical gain media with high tunability and simple solution synthesis. In this study, two gain regimes, namely amplified spontaneous emission and random lasing, are demonstrated in same MAPbBr$_3$ halide…
One of the main challenges for future quantum information technologies is miniaturization and integration of high performance components in a single chip. In this context, electrically driven sources of non-classical states of light have a…
The single-band high-efficiency light absorption of nanostructures finds extensive applications in var ious fields such as photothermal conversion, optical sensing, and biomedicine. In this paper, a vertically stacked nanohybrid structure…