Related papers: Temperature stable 1.3 {\mu}m emission from GaAs
By coupling silicon nanowires (~150 nm diameter, 20 micron length) with an {\Omega}-shaped plasmonic nanocavity we are able to generate broadband visible luminescence, which is induced by high-order hybrid nanocavity-surface plasmon modes.…
We report on a systematic study of nanomechanical dissipation in high-frequency (approximatively 300 MHz) gallium arsenide optomechanical disk resonators, in conditions where clamping and fluidic losses are negligible. Phonon-phonon…
In fluorescence spectra of nanodiamonds (NDs) synthesized at high pressure from adamantane and other organic compounds, very narrow (~1 nm) lines of unknown origin are observed in a wide spectroscopic range from ~500 to 800 nm. Here, we…
The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with the more traditional three-dimensional…
The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…
We report a photoluminescence study of high-quality Ge samples at temperatures 12 K $\leq$ T $\leq$ 295 K, over a spectral range that covers phonon-assisted emission from the indirect gap (between the lowest conduction band at the L point…
We examine the intrinsic energy dissipation steps in electrically biased graphene channels. By combining in-situ measurements of the spontaneous optical emission with a Raman spectroscopy study of the graphene sample under conditions of…
In this paper, we present the first measurement of a Gallium Arsenide crystal working as low-temperature calorimeter for direct Dark Matter (DM) searches within the DAREDEVIL (DARk-mattEr DEVIces for Low energy detection) project. In the…
Bismuth-Gallium co-doped silica glass fiber preform was prepared from nano-porous silica xerogels using a conventional solution doping technique with a heterotrinuclear complex and subsequent sintering. Ga-connected optical Bismuth active…
Photo-excited carriers, distributed among the localized states of self-assembled quantum dots, often show very anomalous temperature dependent photoluminescence characteristics. The temperature dependence of the peak emission energy may be…
Semiconductor-based emitters of pairwise photonic entanglement are a promising constituent of photonic quantum technologies. They are known for the ability to generate discrete photonic states on-demand with low multiphoton emission,…
Semi-insulating, undoped, Liquid Encapsulated Czochralski (SI-U LEC) GaAs detectors have been irradiated with 1MeV neutrons, 24GeV/c protons, and 300MeV/c pions. The maximum fluences used were 6, 3, and 1.8~10$^{14}$ particles/cm$^{2}$…
III-nitride alloys are wide band gap semiconductors with a broad range of applications in optoelectronic devices such as light emitting diodes and laser diodes. Indium gallium nitride light emitting diodes have been successfully produced…
We demonstrate room temperature visible wavelength photoluminescence from In0.5Ga0.5As quantum dots embedded in a GaP membrane. Time-resolved above band photoluminescence measurements of quantum dot emission show a biexpontential decay with…
The interaction of Laguerre-Gauusian light at select wavelengths from 690 to 810 nm with a p-type gallium arsenide (GaAs) photocathode photonic device and the production of photogenerated electrons was investigated. Spin angular momentum…
We study (In,Ga)(As,Sb)/GaAs quantum dots embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. Quantum dot samples are studied by temperature-dependent photoluminescence, and we observe…
By independently engineering strain and composition, this work demonstrates and investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. We extend the room-temperature emission wavelength above ~4.0…
We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from…
In this paper, thermal conductivity of crystalline GaAs is calculated using first-principles lattice dynamics. The harmonic and cubic force constants are obtained by fitting them to the force-displacement data from density functional theory…
Photoluminescence spectroscopy of single InAs quantum dots at cryogenic temperatures (~14 K) is performed using a micron-scale optical fiber taper waveguide as a near-field optic. The measured collection efficiency of quantum dot…