Photoluminescence in Ga/Bi co-doped silica glass
Abstract
Bismuth-Gallium co-doped silica glass fiber preform was prepared from nano-porous silica xerogels using a conventional solution doping technique with a heterotrinuclear complex and subsequent sintering. Ga-connected optical Bismuth active center (BAC) was identified as the analogue of Al-connected BAC. Visible and infrared photoluminescence (PL) were investigated in a wide temperature range of 1.46-300 K. Based on the results of the continuous wave (CW) and time resolved spectroscopy we identify the centers emitting in the spectral region of 480-820 nm as Bi ions. The near infrared (NIR) PL around 1100 nm consists of two bands. While the first one can be ascribed to the transition in Bi ion, the second band is presumably associated to defects. We put in evidence the energy transfer between Bi ions and the second NIR emitting center via quadrupole-quadrupole and dipole-quadrupole mechanisms of interactions. Finally, we propose the energy level diagram of Bi ion interacting with this defect.
Keywords
Cite
@article{arxiv.1305.3428,
title = {Photoluminescence in Ga/Bi co-doped silica glass},
author = {Igor Razdobreev and Hicham El Hamzaoui and Vladimir B. Arion and Mohamed Bouazaoui},
journal= {arXiv preprint arXiv:1305.3428},
year = {2015}
}
Comments
15 pages, 12 figures, submitted to Optics Express