Related papers: Photoluminescence in Ga/Bi co-doped silica glass
The temperature dependences of optical loss and luminescence spectra have been measured in visible and NIR spectral range for Bi-doped silica and Bi-doped germanosilicate fibers for the first time. The temperature dependence of luminescence…
The near infrared (NIR) photoluminescence (PL) in Bismuth-doped aluminosilicate glasses was reported about of 16 years ago. Although it has since been developed various kinds of fiber lasers and amplifiers based on the Bismuth-doped silica…
3D excitation-emission luminescence spectra of Bi-doped optical fibers of various compositions were measured in a wide wavelength range 450-1700 nm. Such luminescence spectra were obtained for Bi-doped pure silica and germania fibers, and…
The magnetic field induced circular polarization of near infrared photoluminescence in Bi-doped pure silica glass was studied in the spectral range of 660 - 1600 nm covering three excited state levels. The highest degree of magnetic…
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an…
The photo-luminescence features of Ge-oxygen defect centers in a 100nm thick Ge-doped silica film on a pure silica substrate were investigated by looking at the emission spectra and time decay detected under synchrotron radiation excitation…
Experimental and computer-modeling studies of spectral properties of crystalline AgCl doped with metal bismuth or bismuth chloride are performed. Broad near-IR luminescence band in the 0.8--1.2mkm range with time dependence described by two…
Bi5(GaCl4)3 sample has been synthesized through the oxidation of Bi metal by gallium chloride (GaCl3) salt. Powder X-ray diffraction as well as micro-Raman scattering results revealed that, in addition to crystalline Bi5(GaCl4)3 in the…
A detailed study of optical properties of bismuth-doped fibers based on SiO2 and GeO2 glasses containing no other dopants has been carried out. To provide important information about spectroscopic properties of IR bismuth-related active…
A comparative first-principles study of possible bismuth-related centers in TlCl and CsI crystals is performed and the results of computer modeling are compared with the experimental data. The calculated spectral properties of the bismuth…
For the first time, we report that a single crystal of (K-crypt)2Bi2 containing [Bi2]2+ displays ultra-broad near-infrared photoluminescence (PL) peaking at around 1190 nm and having a full width at the half maximum of 212 nm, stemming from…
We present the room temperature (RT) near-infrared (NIR) photoluminescence (PL) properties of Si/Ge nanowire (NW) grown silicon wafers which were treated by vapor of HF:HNO3 chemical mixture. This treatment activates or enhances the PL…
We have studied the 1.5 $\mu$m photoluminescence (PL) from Er ions after annealing two different sample sets in the temperature range 500 °C to 1100 °C. The different sample sets were made by magnetron sputtering from composite…
We have fabricated highly-luminescent samples with erbium-doped amorphous silicon sub-oxide (a-SiOx<Er>) layers on SiO2/Si substrates. The layers are designed to provide a resonance with large modal overlap with the active material and with…
A silicon light source at communication wavelength is the bottleneck for developing monolithically integrated silicon photonics. Doping silicon with erbium ions was believed to be one of the most promising approaches but suffers from the…
The photophysical properties of Bi82+ and Bi53+ polycations stabilized by [AlCl4]- have been studied experimentally and theoretically. The obtained product was thoroughly evaluated by powder X-ray diffraction and photoluminescence…
We have studied the temperature dependencies of the photoluminescence (PL) intensity of 4.1 eV in microcrystalline powder of hexagonal boron nitride in the range of 7-1100 K. The results obtained have been analyzed within the band model of…
First-principle study of bismuth-related oxygen-deficient centers ($=$Bi$\cdots$Ge$\equiv$, $=$Bi$\cdots$Si$\equiv$, and $=$Bi$\cdots$Bi$=$ oxygen vacancies) in Bi$_2$O$_3$-GeO$_2$, Bi$_2$O$_3$-SiO$_2$, Bi$_2$O$_3$-Al$_2$O$_3$-GeO$_2$, and…
A negative kink in excess conductivity is observed in p-type non-degenerate (moderate dopant concentration) silicon wafers when excited by a very narrow pulse of 532 nm laser appearing just after the complete positive decay of dark…
We observed an intensive near-infrared luminescence in Bi-doped KAlCl4 polycrystalline material. Luminescence dependence on the excitation wavelength and temperature of the sample was studied. Our experimental results allow asserting that…