Related papers: Photoluminescence in Ga/Bi co-doped silica glass
The demand for single photon sources at $\lambda~=~1.54~\mu$m, which follows from the consistent development of quantum networks based on commercial optical fibers, makes Er:O$_x$ centers in Si still a viable resource thanks to the optical…
First-principle study of possible bismuth-related centers in SiO2 and GeO2 hosts is performed and the results are compared with the experimental data. The following centers are modeled: trivalent and divalent Bi substitutional centers; BiO…
We demonstrate a circularly polarized photoluminescence emission, with dissymmetry factors $g_\mathrm{PL}$ over 0.1, from achiral organic dye molecules by leveraging quasi-bound states in the continuum (quasi-BICs) and surface lattice…
We report data on the luminescence spectra associated with photochromic centers in X-ray irradiated calcium fluoride crystals doped with Lu ions. Irradiation in low energy photochromic centers absorption band excites emission, which can be…
Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at. %) silica-gel films (0.13…
We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing. Their optical emission in photoluminescence (PL) regime consists of an articulated spectrum with…
Phosphorus-doped diamond is relevant for applications in sensing, optoelectronics and quantum photonics, since the unique optical properties of color centers in diamond can be combined with the n-type conductivity attained by the inclusion…
Photoluminescence (PL) from femtosecond laser modified regions inside cubic-boron nitride (c-BN) was measured under UV and visible light excitation. Bright PL at the red spectral range was observed, with a typical excited state lifetime of…
The circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by {\delta}-barriers heavily doped with boron, 5 10^21 cm^-3, is under study as a…
Photoluminescence (PL) and Raman spectra of sol-gel-derived silica glasses were studied in course of the consolidation of xerogel to dense glass. A number of ultraviolet PL bands in 3 eV - 4 eV region were found, which have not been…
Photoluminescence spectra have been investigated in erbium doped GaLaS(O) glasses. The samples demonstrate intense green emission bands centered at around 525 and 550 nm due to up-conversion processes in erbium ions. The theoretical…
Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A…
Silicon films doped with Er and O were prepared by techniques of physical vapor deposition on crystalline silicon, ion beam mixing and oxygen incorporation through Ar+ and O2+ implantation, and thermal annealing. Processing steps were…
Experimental and theoretical studies of spectral properties of crystalline TlCl:Bi are performed. Two broad near-infrared luminescence bands with a lifetime about 0.25 ms are observed: a strong band near 1.18 mkm excited by 0.40, 0.45, 0.70…
Photoluminescence and thermally stimulated luminescence of synthetic and natural (morion and smoky) $\alpha$-quartz crystals doped with aluminum and alkali ions were studied. The photoluminescence spectrum is characterized with the main…
Photoluminescence (PL) features of nanostructured h-BN powder are studied in the range of 200-600 nm in millisecond time window. It is found that four PL excitation bands of 4.58, 5.01, 5.29, and 5.77 eV are characteristic of the spectral…
The photoluminescence (PL) spectra of Ar-ion irradiated single crystals of SrTiO3 (STO) excited by the 325 nm line of a He-Cd laser are compared with those of pristine crystals, epitaxial films, and amorphous layers of STO at several…
We report experimental data on two types of natural silica, differing for their OH content, irradiated with UV photons (4.66 eV) from a pulsed Nd:YAG laser. Irradiation induces a reduction of the absorption band at 5.12eV and of the…
IR luminescence and absorption in bismuth-doped silica glass-core fibers observed recently (see [arXiv:1106.2969v1 [physics.optics]) are argued to be caused by transitions in interstitial BiO molecules
For erbium-doped amorphous oxides, such as those that are used in compact lightwave devices interfaced with silicon, values of the refractive indices are commonly obtained empirically. This work, combining experimental and theoretical…