English

Defect-induced photoluminescence of strontium titanate and its modulation by electrostatic gating

Strongly Correlated Electrons 2015-12-18 v1 Materials Science

Abstract

The photoluminescence (PL) spectra of Ar-ion irradiated single crystals of SrTiO3 (STO) excited by the 325 nm line of a He-Cd laser are compared with those of pristine crystals, epitaxial films, and amorphous layers of STO at several temperatures down to 20 K. The 550 eV Ar-beam irradiation activates three distinctly visible PL peaks: blue (~430 nm), green (~550 nm), and infrared (~820 nm) at room temperature, making the photoluminescence multicolored. The abrupt changes in PL properties below ~100 K are discussed in relation with the antiferrodistortive structural phase transition in SrTiO3 from cubic to tetragonal symmetry, which makes it a direct bandgap semiconductor. The photoluminescence spectra are also tuned by an electrostatic gate field in a field-effect transistor geometry. At 20 K, we observed a maximum increase of ~20% in PL intensity under back gating of SrTiO3.

Keywords

Cite

@article{arxiv.1512.05518,
  title  = {Defect-induced photoluminescence of strontium titanate and its modulation by electrostatic gating},
  author = {Dushyant Kumar and R. C. Budhani},
  journal= {arXiv preprint arXiv:1512.05518},
  year   = {2015}
}