Related papers: Temperature stable 1.3 {\mu}m emission from GaAs
We report the optical excitation-dependent output photocurrent characteristics of GaN-based polariton diode lasers operated under reverse-bias at room temperature. The photocurrent demonstrates a non-linear enhancement at an incident…
Images of the steady-state luminescence of passivated GaAs self-standing films under excitation by a tightly-focussed laser are analyzed as a function of light excitation power. While unipolar diffusion of photoelectrons is dominant at very…
We present a new design for a directed high-flux high-temperature atomic vapor source for use in atomic physics experiments conducted under vacuum. An externally heated nozzle made of an array of stainless steel microcapillaries produces a…
The temperature dependence of the refractive indices of potassium titanyl phosphate (KTP) are shown to enable quasi-phasematched type II spontaneous parametric downconversion (SPDC) with low temperature sensitivity. Calculations show the…
Cost-efficient and easily integrable broadband mid-infrared (mid-IR) sources would significantly enhance the application space of photonic integrated circuits (PICs). Thermal incandescent sources are superior to other common mid-IR emitters…
We create an optical frequency, polarization independent, narrow band-pass filter of 1.3 GHz (3 dB bandwidth), using the steep dispersion near the Rubidium D1 atomic transitions within a prism-shaped vapor cell. This enables us to clean the…
Two vertical-external-cavity surface-emitting laser (VECSEL) systems producing ultraviolet (UV) radiation at 235 nm and 313 nm are demonstrated. The systems are suitable for quantum information processing applications with trapped beryllium…
Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical…
The authors report the observation of electroluminescence from GaAs-based semiconductor microcavities in the strong coupling regime. At low current densities the emission consists of two peaks, which exhibit anti-crossing behaviour as a…
Room temperature electronic diffusion is studied in 3 mum thick epitaxial p+ GaAs lift-off films using a novel circularly polarized photoluminescence microscope. The method is equivalent to using a standard optical microscope and provides a…
The temperature dependence of the thermal boundary resistivity is investigated in glass-embedded Ag particles of radius 4.5 nm, in the temperature range from 300 to 70 K, using all-optical time-resolved nanocalorimetry. The present results…
Avalanche photodiodes (APDs) are promising light sensor for various fields of experimental physics. It has been argued, however, that variation of APD gain with temperature could be a serious problem preventing APDs from replacing…
The unusual electrical and optical properties of graphene make it a promising candidate for optoelectronic applications. An important, but as yet unexplored aspect is the role of photo-excited hot carriers in charge and energy transport at…
Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In…
The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical…
We show that by annealing Ga1-xMnxAs thin films at temperatures significantly lower than in previous studies, and monitoring the resistivity during growth, an unprecedented high Curie temperature Tc and conductivity can be obtained. Tc is…
We describe measurements demonstrating laser cooling of an atomic gas by means of collisional redistribution of radiation. The experiment uses rubidium atoms in the presence of several hundred bar of argon buffer gas pressure. Frequent…
Diffractionless propagation of optical beams through atomic vapors is investigated. The atoms in the vapor are operated in a three-level Raman configuration. A suitably chosen control beam couples to one of the transitions, and thereby…
Two-dimensional semiconducting materials have a wide range of applications in various fields due to their excellent properties and rich physics. Here, we report a detailed investigation of the temperature dependent Raman and…
GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and…