Related papers: Temperature stable 1.3 {\mu}m emission from GaAs
Gallium nanoparticles (Ga-NPs) exhibit promising plasmonic properties spanning ultraviolet to infrared spectral regions, making them suitable for diverse nanophotonic applications. However, the synthesis of uniform and ordered Ga-NP arrays…
Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambient. Crystallographic structural and Raman scattering studies…
In this work, we present a detailed photophysical analysis of recently-discovered optically stable, single photon emitters (SPEs) in Gallium Nitride (GaN). Temperature-resolved photoluminescence measurements reveal that the emission lines…
We describe the optical emission and the carrier dynamics of an ensemble of self-assembled GaAs quantum dots embedded in GaP(001). The QD formation is driven by the 3.6 % lattice mismatch between GaAs and GaP in Stranski-Krastanow mode…
The optical and scintillation properties of undoped, Si-doped, and Si, B co-doped GaAs samples were studied. The light yield specification and X-ray luminescence of GaAs over a wide IR region by using Si and InGaAs photodetectors are…
We present detailed experimental studies of the temperature dependence of the plateau conductance of GaAs quantum point contacts in the temperature range from 0.3 K to 10 K. Due to a strong lateral confinement produced by a shallow-etching…
We report the first experimental observations of two-photon emission from semiconductors, to the best of our knowledge, and develop a corresponding theory for the room-temperature process. Spontaneous two-photon emission is demonstrated in…
Exploring the limits of spontaneous emission coupling is not only one of the central goals in the development of nanolasers, it is also highly relevant regarding future large-scale photonic integration requiring energy-efficient coherent…
Using angle resolved photoemission we have investigated annealing-induced changes in Ga(1-x)Mn(x)As with x = 0.05. We find that the position of the Fermi energy is a function of annealing time and temperature. It is also established that…
Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste heat recovery. Here, we report the design, fabrication, and…
A key component for the realization of silicon-photonics are integrated lasers operating in the important communications band near 1.55 ${\mu}$m. One approach is through the use of GaSb-based alloys which may be grown directly on silicon.…
Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an…
The performance of a near-field thermophotovoltaic system with a tandem-cell structure composed of thin-film p-doped GaSb and n-doped InAs sub-cells on a gold backside reflector is theoretically investigated. The temperatures of the…
We report on lasing at room temperature and at telecommunications wavelength from photonic crystal nanocavities based on InAsP/InP quantum dots. Such laser cavities with a small modal volume and high quality factor display a high…
In this manuscript, we demonstrate the ability of nonlinear light-atom interactions to produce tunably non-Gaussian, partially self-healing optical modes. Gaussian spatial-mode light tuned near to the atomic resonances in hot rubidium vapor…
As the field of terahertz (THz) photonics advances, we present a monolithic gallium arsenide (GaAs) disk-shaped whispering gallery mode resonator that has potential as a component in THz nonlinear optics. GaAs is a material with significant…
We describe the operation of two GaN-based diode lasers for the laser spectroscopy of gallium at 403 nm and 417 nm. Their use in an external cavity configuration enabled the investigation of absorption spectroscopy in a gallium hollow…
Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibility for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip…
A novel approach has been developed to calculate the temperature dependence of the optical response of a semiconductor. The dielectric function is averaged over several thermally perturbed configurations that are extracted from molecular…
The control over the spectral broadening of an ensemble of emitters, mainly attributable to the size and shape dispersion and the homogenous broadening mechanisms, is crucial to several applications of quantum dots. We present a convenient…