Related papers: Temperature stable 1.3 {\mu}m emission from GaAs
We perform photon-assisted-tunneling (PAT) experiments on a GaAs double quantum dot device under high microwave excitation power. Photon-assisted absorption of up to 14 photons is observed, when electron temperature (>1K) are far above the…
We introduce the photonic trumpet, a dielectric structure which ensures a nearly perfect coupling between an embedded quantum light source and a Gaussian free-space beam. A photonic trumpet exploits both the broadband spontaneous emission…
Graphene and related two-dimensional materials are promising candidates for atomically thin, flexible, and transparent optoelectronics. In particular, the strong light-matter interaction in graphene has allowed for the development of…
Like many optoelectronics, the highest quality III-V solar cells start out as thin single-crystalline multilayers on GaAs substrates. Separating these device layers from their growth substrate enables higher performing devices and wafer…
Unique structural and optical properties of atomically thin two-dimensional semiconducting transition metal dichalcogenides enable in principle their efficient coupling to photonic cavities with optical modes volumes close to or below the…
The photoluminescence spectra of band-edge transitions in GaN is studied as a function of temperature. The parameters that describe the temperature dependence red-shift of the band-edge transition energy and the broadening of emission line…
Atomically thin semiconducting transition-metal dichalcogenides provide novel insights into the physics of many-body effects mediated by Coulomb interactions. Here, we report on temperature-dependent ($T$ = 7-295 K) reflectance contrast and…
Polyaniline and graphene nanoplatelets (PANI-GNP) nanocomposites are synthesized by in situ oxidative polymerization of polyaniline using an oxidizing agent, ammonium peroxy disulphate (APS). The mass of GNP in the nanocomposites varied by…
Room-temperature 1535-nm-band photoluminescence in ~126 nm silica films (6 at. % doping), produced by spin-coating an Er2O3 and tetraethylorthosilicate sol-gel formulation on silicon substrates, was studied as a function of vacuum furnace…
The nanoscale resistive switching characteristics of gallium phosphide (GaP) thin films directly grown on Si are investigated as a function of incident light. Firstly, as-grown GaP films show a high RON/ROFF (~10^4), shown to arise from the…
The thermal emission of refractory plasmonic metamaterial - a titanium nitride 1D grating - is studied at high operating temperature (540 {\deg}C). By choosing a refractory material, we fabricate thermal gratings with high brightness that…
A simplistic design of a self-powered UV-photodetector device based on hybrid r-GO/GaN is demonstrated. Under zero bias, the fabricated hybrid photodetector shows a photosensivity of ~ 85% while ohmic contact GaN photodetector with…
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…
In this paper we study thermo-optical effects in gallium phosphite photonic crystal cavities in the visible. By measuring the shift of narrow resonances we derive the temperature dependency of the local refractive index of gallium phosphide…
We demonstrate the generation of nanosecond mid-infrared pulses via fast modulation of thermal emissivity, enabled by the absorption of visible pump pulses in unpatterned silicon and gallium arsenide. The free-carrier dynamics in these…
A study of emission temperatures extracted from excited state populations and of freeze out radii from light particle intensity interferometry is presented. Three high resolution dE-E-Hodoscopes with a total of 216 detectors are combined…
We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a…
We present the simultaneous optical and thermal analysis of a freestanding photonic semiconductor membrane made from wurtzite III-nitride material. By linking micro-photoluminescence ($\mu$PL) spectroscopy with Raman thermometry, we…
The light emission of self-assembled (In,Ga)As/GaAs quantum dots embedded in single GaAs-based micropillars has been studied by time-resolved photoluminescence spectroscopy. The altered spontaneous emission is found to be accompanied by a…
The temperature dependence of electric transport properties of single-layer and few-layer graphene at large charge doping is of great interest both for the study of the scattering processes dominating the conductivity at different…