Related papers: Small-signal amplifier based on single-layer MoS2
We demonstrate a radio-frequency parametric amplifier that exploits the gate-tunable quantum capacitance of an ultra high mobility two dimensional electron gas (2DEG) in a GaAs heterostructure at cryogenic temperatures. The prototype…
In this paper a CMOS two stage operational amplifier has been presented which operates at 1.8 V power supply at 0.18 micron (i.e., 180 nm) technology and whose input is depended on Bias Current. The op-amp provides a gain of 63dB and a…
Newly measured optical absorption and photoluminescence spectra reveal substantial frequency shifts of both exciton and trion peaks as monolayer MoS2 is cooled from 363 K to 4 K. First-principles simulations using the GW-Bethe-Salpeter…
Masers once represented the state-of-the-art in low noise microwave amplification technology, but eventually became obsolete due to their need for cryogenic cooling. Masers based on solid-state spin systems perform most effectively as…
A new phototransistor based on the mechanically-exfoliated single-layer MoS2 nanosheet is fabricated and its light-induced electric properties are investigated in details. Photocurrent generated from the phototransistor is solely determined…
Silicon Photomultipliers (SiPMs) are an excellent candidate for the development of large-area light sensors. Large SiPM-based detectors require low-noise pre-amplifiers to maximize the signal coupling between the sensor and the readout…
Noise level frequently set the basic limit on the smallest signal. New noise reduction technology and amplifiers voltage-noise density, yet still offer high speed, high accuracy, and low power solution. Low noise amplifiers always play a…
Photonic integrated circuits are an enabling technology in modern communications systems. The continually increasing demands for higher-speed and lower operating power devices have resulted in the continued impetus to shrink photonic…
Geometrical confinement effect in exfoliated sheets of layered materials leads to significant evolution of energy dispersion with decreasing layer thickness. Molybdenum disulphide (MoS2) was recently found to exhibit indirect to direct gap…
This paper presents the analysis, design, fabrication, and measurement of an integrated low-noise amplifier (LNA) implemented using a 130 nm CMOS technology, operating in the 2.4 GHz band. The LNA is a crucial component in the performance…
We propose a new type of cryogenic current amplifiers, in which low-frequency power spectrum of current can be measured through a measurement of microwave response of a superconducting resonant circuit shunted by a series array of Josephson…
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…
Two-dimensional semiconductors such as MoS2 are an emerging material family with wide-ranging potential applications in electronics, optoelectronics and energy harvesting. Large-area growth methods are needed to open the way to the…
Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope…
The electron-phonon interaction and related transport properties are investigated in monolayer silicene and MoS2 by using a density functional theory calculation combined with a full-band Monte Carlo analysis. In the case of silicene, the…
Two-dimensional (2D) materials have emerged as promising candidates for miniaturized optoelectronic devices, due to their strong inelastic interactions with light. On the other hand, a miniaturized optical system also requires strong…
In the present work we calculate the phonon-limited mobility in intrinsic n-type single-layer MoS2 as a function of carrier density and temperature for T > 100 K. Using a first-principles approach for the calculation of the electron-phonon…
MoS2 atomic layers have recently attracted much interest because of their two-dimensional structure as well as tunable optical, electrical, and mechanical properties for next generation electronic and electro-optical devices. Here we have…
This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H$_2$) and monolayer MoS$_2$ field effect transistors (MoS$_2$ FET), aiming for sensing application. The MoS$_2$ FET exhibits a response…
We have investigated the deterioration of field effect transistors based on twodimensional materials due to irradiation with swift heavy ions. Devices were prepared with exfoliated single layers of MoS2 and graphene, respectively. They were…