A new phototransistor based on the mechanically-exfoliated single-layer MoS2 nanosheet is fabricated and its light-induced electric properties are investigated in details. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms and it shows good stability. Especially, the single-layer MoS2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching and good photoresponsivity from the MoS2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multi-functional optoelectronic device applications in future.
@article{arxiv.1310.8066,
title = {Single-Layer MoS2 Phototransistors},
author = {Zongyou Yin and Hai Li and Hong Li and Lin Jiang and Yumeng Shi and Yinghui Sun and Gang Lu and Qing Zhang and Xiaodong Chen and Hua Zhang},
journal= {arXiv preprint arXiv:1310.8066},
year = {2013}
}