Related papers: Field-Effect Devices Utilizing LaAlO$_3$-SrTiO$_3$…
At the LaAlO$_3$-SrTiO$_3$ interface, electronic phase transitions can be triggered by modulation of the charge carrier density, making this system an excellent prospect for the realization of versatile electronic devices. Here, we report…
The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO$_3$-SrTiO$_3$ heterostructures. The studies reveal the…
We examine the enhancement of the interfacial superconductivity between LaAlO$_{3}$ and SrTiO$_{3}$ by an effective electric field. Through the breaking of inversion symmetry at the interface, we show that a term coupling the superfluid…
The transport and thermoelectric properties of the interface between SrTiO$_3$ and a 26-monolayer thick LaAlO$_3$-layer grown at high oxygen-pressure have been investigated at temperatures from 4.2 K to 100 K and in magnetic fields up to 18…
Using tunneling spectroscopy we have measured the spectral density of states of the mobile, two-dimensional electron system generated at the LaAlO3-SrTiO3 interface. As shown by the density of states the interface electron system differs…
Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage,…
Electrical field and light-illumination have been two most widely used stimuli in tuning the conductivity of semiconductor devices. Via capacitive effect electrical field modifies the carrier density of the devices, while light-illumination…
Using field effect devices with side gates, we modulate the 2 dimensional electron gas hosted at the LaAlO$_3$/SrTiO$_3$ interface to study the temperature and doping evolution of the magnetotransport. The analysis of the data reveals…
A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was…
The perovskite SrTiO$_3$-LaAlO$_3$ structure has advanced to a model system to investigate the rich electronic phenomena arising at polar interfaces. Using first principles calculations and transport measurements we demonstrate that an…
An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4…
Electron-beam deposition of an insulating granular aluminium or of an off-stoichiometric amorphous alumina layer on a $SrTiO_3$ surface is a simple way to get a metallic interface from insulating materials. No heating nor specific…
Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here we demonstrate the modulation…
The use of SrTiO$_3$ dielectrics as high-permittivity insulator in organic thin film field effect transistors (FET) is evaluated. Field-effect transistors with sputtered SrTiO$_3$ and copper-phthalocyanine (CuPc) as semiconducting layer…
The field-effect-induced modulation of transport properties of 2-dimensional electron gases residing at the LaAlO$_3$/SrTiO$_3$ and LaGaO$_3$/SrTiO$_3$ interfaces has been investigated in a back-gate configuration. Both samples with…
The two-dimensional electron gas occurring between the band insulators SrTiO$_3$ and LaAlO$_3$ continues to attract considerable interest, due to the possibility of dynamic control over the carrier density, and the ensuing phenomena such as…
Depositing disordered Al on top of SrTiO$_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO$_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered…
Recently, it was established that a two-dimensional electron system can arise at the interface between two oxide insulators LaAlO3 and SrTiO3. This paradigmatic example exhibits metallic behaviour and magnetic properties between…
Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both…
Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field…