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Using first-principles method within the framework of the density functional theory, we study the influence of native point defect on the structural and electronic properties of Bi$_2$Se$_3$. Se vacancy in Bi$_2$Se$_3$ is a double donor,…

Materials Science · Physics 2012-07-03 L. Xue , P. Zhou , C. X. Zhang , C. Y. He , G. L. Hao , L. Z. Sun , J. X. Zhong

Combining high resolution scanning tunneling microscopy and first principle calculations, we identified the major native defects, in particular the Se vacancies and Se interstitial defects that are responsible for the bulk conduction and…

Materials Science · Physics 2016-09-07 Jixia Dai , Damien West , Xueyun Wang , Yazong Wang , Daniel Kwok , S-W. Cheong , S. B. Zhang , Weida Wu

Bi$_2$Se$_3$ is a topological insulator and it is often doped with Te to compensate the $n$-type carriers due to Se vacancies. Different doping patterns of Te would influence the transport characteristics of the surface states. We study the…

Materials Science · Physics 2016-12-15 Kaixin Huang , Haotian Zheng , Weidong Luo

Thermoelectric performance is of interest for numerous applications such as waste heat recovery and solid state energy conversion, and will be seen to be closely connected to topological insulator behavior. In this context we here report…

Materials Science · Physics 2015-01-26 Hongliang Shi , David Parker , Mao-Hua Du , David J. Singh

Gas molecule doping on the topological insulator Bi2 Se3 surface with existing Se vacancies is investigated using first-principles calculations. Consistent with experiments, NO2 and O2 are found to occupy the Se vacancy sites, remove…

Mesoscale and Nanoscale Physics · Physics 2013-10-01 Mohammad Koleini , Thomas Frauenheim , Binghai Yan

We theoretically investigate the possibility of establishing ferromagnetism in the topological insulator Bi2Se3 via magnetic doping of 3d transition metal elements. The formation energies, charge states, band structures, and magnetic…

Materials Science · Physics 2013-01-08 Jian-Min Zhang , Wenguang Zhu , Ying Zhang , Di Xiao , Yugui Yao

Doping Bi$_2$Se$_3$ by magnetic ions represents an interesting problem since it may break the time reversal symmetry needed to maintain the topological insulator character. Mn dopants in Bi$_2$Se$_3$ represent one of the most studied…

Materials Science · Physics 2020-02-26 K. Carva , P. Baláž , J. Šebesta , I. Turek , J. Kudrnovský , F. Máca , V. Drchal , J. Chico , V. Sechovský , J. Honolka

Magnetic interaction with the gapless surface states in topological insulator (TI) has been predicted to give rise to a few exotic quantum phenomena. However, the effective magnetic doping of TI is still challenging in experiment. Using…

Materials Science · Physics 2014-01-06 Jian-Min Zhang , Wenmei Ming , Zhigao Huang , Gui-Bin Liu , Xufeng Kou , Yabin Fan , Kang L. Wang , Yugui Yao

Topological insulators possess a non-conductive bulk and present surface states, henceforth, they are electrically conductive along their boundaries. Bismuth selenide ($Bi_2Se_3$) is one of the most promising topological insulators.…

Topological insulators are materials with an insulating bulk interior while maintaining gapless boundary states against back scattering. Bi$_2$Se$_3$ is a prototypical topological insulator with a Dirac-cone surface state around $\Gamma$.…

Due to high density of native defects, the prototypical topological insulator (TI), Bi$_2$Se$_3$, is naturally n-type. Although Bi$_2$Se$_3$ can be converted into p-type by substituting 2+ ions for Bi, only light elements such as Ca have…

Materials Science · Physics 2020-02-12 Jisoo Moon , Zengle Huang , Weida Wu , Seongshik Oh

We present a first-principles study of the electronic, magnetic, and transport properties of the topological insulator Bi$_{2}$Te$_{3}$ doped with Mn atoms in substitutional (Mn$_{\rm Bi}$) and interstitial van der Waals gap positions…

Materials Science · Physics 2016-06-15 K. Carva , J. Kudrnovský , F. Máca , V. Drchal , I. Turek , P. Baláž , V. Tkáč , V. Holý , V. Sechovský , J. Honolka

Bi2Se3 is a prototypical topological insulator which has a small band gap (~0.3 eV) and topologically protected conducting surface states. This material exhibits quite strong thermoelectric effects. Here we show in a mechanically exfoliated…

A combined experimental and theoretical study of doping individual Fe atoms into Bi2Se3 is presented. It is shown through a scanning tunneling microscopy study that single Fe atoms initially located at hollow sites on top of the surface…

The Cu-doped topological insulator Bi$_2$Se$_3$ has recently been found to undergo a superconducting transition upon cooling, raising the possibilities that it is the first known "topological superconductor" or realizes a novel non-Abelian…

Superconductivity · Physics 2009-12-18 L. Wray , S. Xu , J. Xiong , Y. Xia , D. Qian , H. Lin , A. Bansil , Y. Hor , R. J. Cava , M. Z. Hasan

Topological insulators embody a new state of matter characterized entirely by the topological invariants of the bulk electronic structure rather than any form of spontaneously broken symmetry. Unlike the 2D quantum Hall or quantum…

Topological insulators (TIs) are materials with an insulating bulk characterized by a gapped band structure, along with gapless metallic surface states having a Dirac cone with a helical spin structure in momentum space. The helical…

Materials Science · Physics 2024-09-02 Sumana Paul , Moumita Das , Sujoy Datta , Raja Chakraborty , Prabhat Mandal , P. K. Giri

Surface-states of topological insulators are assumed to be robust against non-magnetic defects in the crystal. However, recent theoretical models and experiments indicate that even non-magnetic defects can perturb these states. Our…

Materials Science · Physics 2022-07-25 Sharmila N. Shirodkar , Pratibha Dev

Non-invasive local probes are needed to characterize bulk defects in binary and ternary chalcogenides. These defects contribute to the non-ideal behavior of topological insulators. We have studied bulk electronic properties via $^{125}$Te…

Bi2Se3 is a topological insulator with metallic surface states residing in a large bulk bandgap. It is believed that Bi2Se3 gets additional n-type doping after exposure to atmosphere, thereby reducing the relative contribution of surface…

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