Bi2Se3 is a topological insulator with metallic surface states residing in a large bulk bandgap. It is believed that Bi2Se3 gets additional n-type doping after exposure to atmosphere, thereby reducing the relative contribution of surface states in total conductivity. In this letter, transport measurements on Bi2Se3 nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi2Se3 under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological surface states. Appropriate surface passivation or encapsulation may be required to probe topological surface states of Bi2Se3 by transport measurements.
@article{arxiv.1102.3935,
title = {Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3},
author = {Desheng Kong and Judy J. Cha and Keji Lai and Hailin Peng and James G. Analytis and Stefan Meister and Yulin Chen and Hai-Jun Zhang and Ian R. Fisher and Zhi-Xun Shen and Yi Cui},
journal= {arXiv preprint arXiv:1102.3935},
year = {2011}
}