English

Understanding Bulk Defects in Topological Insulators from Nuclear-Spin Interactions

Materials Science 2015-06-23 v1 Mesoscale and Nanoscale Physics

Abstract

Non-invasive local probes are needed to characterize bulk defects in binary and ternary chalcogenides. These defects contribute to the non-ideal behavior of topological insulators. We have studied bulk electronic properties via 125^{125}Te NMR in Bi2_2Te3_3, Sb2_2Te3_3, Bi0.5_{0.5}Sb1.5_{1.5}Te3_3, Bi2_2Te2_2Se and Bi2_2Te2_2S. A distribution of defects gives rise to asymmetry in the powder lineshapes. We show how the Knight shift, line shape and spin-lattice relaxation report on carrier density, spin-orbit coupling and phase separation in the bulk. The present study confirms that the ordered ternary compound Bi2_2Te2_2Se is the best TI candidate material at the present time. Our results, which are in good agreement with transport and ARPES studies, help establish the NMR probe as a valuable method to characterize the bulk properties of these materials.

Keywords

Cite

@article{arxiv.1506.06338,
  title  = {Understanding Bulk Defects in Topological Insulators from Nuclear-Spin Interactions},
  author = {Dimitrios Koumoulis and Belinda Leung and Thomas C. Chasapis and Robert Taylor and Daniel King and Mercouri G. Kanatzidis and Louis-S. Bouchard},
  journal= {arXiv preprint arXiv:1506.06338},
  year   = {2015}
}

Comments

24 pages, 6 figures

R2 v1 2026-06-22T09:57:25.969Z