Due to high density of native defects, the prototypical topological insulator (TI), Bi2Se3, is naturally n-type. Although Bi2Se3 can be converted into p-type by substituting 2+ ions for Bi, only light elements such as Ca have been so far effective as the compensation dopant. Considering that strong spin-orbit coupling (SOC) is essential for the topological surface states, a light element is undesirable as a dopant, because it weakens the strength of SOC. In this sense, Pb, which is the heaviest 2+ ion, located right next to Bi in the periodic table, is the most ideal p-type dopant for Bi2Se3. However, Pb-doping has so far failed to achieve p-type Bi2Se3 not only in thin films but also in bulk crystals. Here, by utilizing an interface engineering scheme, we have achieved the first Pb-doped p-type Bi2Se3 thin films. Furthermore, at heavy Pb-doping, the mobility turns out to be substantially higher than that of Ca-doped samples, indicating that Pb is a less disruptive dopant than Ca. With this SOC-preserving counter-doping scheme, it is now possible to fabricate Bi2Se3 samples with tunable Fermi levels without compromising their topological properties.
@article{arxiv.1908.10318,
title = {Pb-doped p-type Bi$_2$Se$_3$ thin films via interfacial engineering},
author = {Jisoo Moon and Zengle Huang and Weida Wu and Seongshik Oh},
journal= {arXiv preprint arXiv:1908.10318},
year = {2020}
}