Related papers: Structural Investigation of InAs-AlInAs and InAs-A…
InAs nanowires with Al$_x$In$_{1-x}$P or Al$x$In$_{1-x}$As shells were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GS-MBE) system. Core diameters and shell thicknesses…
The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, we report on the growth of InAs/InP/GaAsSb core-dual-shell…
We report on \textit{in situ} growth of crystalline Al and Nb shells on InAs nanowires. The nanowires are grown on Si(111) substrates by molecular beam epitaxy (MBE) without foreign catalysts in the vapor-solid mode. The metal shells are…
We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam…
Al(0.37)Ga(0.63)As nanowires (NWs) were grown in a molecular beam epitaxy system on GaAs(111)B substrates. Micro-photoluminescence measurements and energy dispersive X-ray spectroscopy indicated a core-shell structure and Al composition…
We present direct evidence of enhanced Ga interdiffusion in InAs free-standing nanowires grown at moderate temperatures by molecular beam epitaxy on GaAs (111)B. Scanning electron microscopy together with X-ray diffraction measurements in…
We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy (MBE) at 220 {\deg}C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs…
Semiconductor nanowires are promising material systems for coming of age nanotechnology. The usage of the vapor solid solid (VSS) route, where the catalyst used for promoting axial growth of nanowire is a solid, offers certain advantages…
We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a…
A procedure to achieve the density-controlled growth of gold-catalyzed InP nanowires (NWs) on (111) silicon substrates using the vapor-liquid-solid method by molecular beam epitaxy is reported. We develop an effective and mask-free method…
Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped…
Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in the quest for Majorana zero modes (MZMs). However, InAs nanowires often exhibit a high…
Breakthroughs extending nanostructure engineering beyond what is possible with current fabrication techniques will be crucial for enabling next-generation nanotechnologies. Nanoepitaxy of strain-engineered bent nanowire heterostructures…
We propose a dual-adatom diffusion-limited model for the growth of compound semiconductor nanowires via the vapor-liquid-solid or the vapour-solid-solid mechanisms. The growth is catalyzed either by a liquid or a solid nanoparticle. We…
We report on the growth of axial InAs-on-GaAs nanowire heterostructures on silicon by molecular beam epitaxy using 20 nm diameter Au catalysts. First, the growth parameters of the GaAs nanowire segment were optimized to achieve a pure…
Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated.(In,Ga)As core nanowires were grown at high temperature (500…
Compound semiconducting nanowires are promising building blocks for several nanoelectronic devices yet the inability to reliably control their growth morphology is a major challenge. Here, we report the Au-catalyzed vapor-liquid-solid (VLS)…
We study the optical properties of a single core-shell GaAs-AlGaAs nanowire (grown by VLS method) using the technique of micro-photoluminescence and spatially-resolved photoluminescence imaging. We observe large linear polarization…
GaAs nanowires and GaAs-Fe3Si core-shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). Ga droplets were…
Interest in hybrid electronic devices for quantum science is driving the research into superconductor-semiconductor materials combinations. Here we study InAs nanowires coated with shells of $\beta$-Sn. The wires grow via the…