Related papers: Analysing surface structures on (Ga,Mn)As by Atomi…
Systematic investigations of the structural and magnetic properties of single crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are presented. High resolution transmission electron microscopy, synchrotron x-ray diffraction,…
We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties…
Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAs(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation…
Magnetic linear dichroism and birefringence in (Ga,Mn)As epitaxial layers is investigated by measuring the polarization plane rotation of reflected linearly polarized light when magnetization lies in the plane of the sample. We report on…
The initial growth of MnBi on MnAs terminated (GaMn)As is studied by means of synchrotron based photoelectron spectroscopy. From analysis of surface core level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the…
Theory predicts that two-dimensional (2D) materials may only exist in the presence of out-ofplane deformations on atomic length scales, frequently referred to as ripples. While such ripples can be detected via electron microscopy, their…
In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally…
The surface structure of Few-Layer Graphene (FLG) epitaxially grown on the C-face of SiC has been investigated by TM-AFM in ambient air and upon interaction with diluted aqueous solutions of bio-organic molecules (dimethyl sulfoxide, DMSO,…
Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic capping layer deposited on the GaMnAs surface directly after the epitaxial growth. It is shown that the…
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N…
The effect of film morphology on its surface chemistry and band structure has been analyzed for gallium nitride epitaxial films grown by molecular beam epitaxy. The film morphology has been studied using scanning electron microscopy and…
Mn-doped GaAs thin films were grown at a high substrate temperature of 580 C. During the growth process, the Mn cell temperature was ramped at different rates, resulting in a variety of different Mn concentration depth profile slopes, as…
Structural investigation of as-grown as well as annealed Ga(1-x)Mn(x)As epilayers was carried out using high resolution X-ray diffraction (XRD) measurements for a wide range of Mn concentrations (0.027<=x<=0.083), with special attention on…
Morphological, optical and transport properties of GaN and InN nanowires grown by molecular beam epitaxy (MBE) have been studied. The differences between the two materials in respect to growth parameters and optimization procedure was…
The magnetic domain structure is studied in epitaxial Fe$_{100-x}$Ga$_x$/MgO(001) films with 0 $<$ x $<$ 30 and thicknesses below 60 nm by magnetic force microscopy. For low gallium content, domains with the magnetization lying in the film…
We have investigated the formation and growth of nano sized ripple topography on ZnO thin films by 10 keV O1+ bombardment at impact angles of 80{\degree} and 60{\degree}, varying the ion fluence from 5{times}10^16 to 1{\times}10^18…
The magnetic coupling between iron and alpha - MnAs in the epitaxial system Fe/MnAs/GaAs(001) has been studied at the sub-micron scale, using element selective x-ray photoemission electron microscopy. At room temperature, MnAs layers…
Structural and optical properties of MBE-grown GaAs(001) surface have been studied by reflection high-energy electron diffraction and single-wavelength ellipsometry under dynamic conditions of ramp heating after desorption of passivating…
We describe a systematic study of the synthesis, microstructure and magnetization of hybrid ferromagnet-semiconductor nanomaterials comprised of MnAs nanoclusters embedded in a p-doped GaAs matrix. These samples are created during the in…
A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth temperature (Tg) between 700 and 590 {\deg}C, respectively. We…