Related papers: Defect detection in nano-scale transistors based o…
We calculate the spectral density of voltage fluctuations in a Single Electron Transistor (SET), biased to operate in a transport mode where tunneling events are correlated due to Coulomb interaction. The whole spectrum from low frequency…
We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electron transistor (SET) patterned in close proximity to the DQD.…
Single electron transistors (SETs) are very sensitive electrometers and they can be used in a range of applications. In this paper we give an introduction to the SET and present a full quantum mechanical calculation of how noise is…
The current-voltage (I-V) characteristics of single-electron transistors (SETs) have been measured in various electromagnetic environments. Some SETs were biased with one-dimensional arrays of dc superconducting quantum interference devices…
We evaluate the detector nonideality (and energy sensitivity) of a normal-state single-electron transistor (SET) in the cotunneling regime in a two-charge-state approximation. For small conductances and at zero temperature, the SET's…
We have suspended an Al based single-electron transistor whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island…
We have directly measured the quantum noise of a superconducting single-electron transistor (S-SET) embedded in a microwave resonator consisting of a superconducting LC tank circuit. Using an effective bath description, we find that the…
We have systematically measured the shot noise in a single electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency…
The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for read-out schema in solid-state quantum computing where…
Starting from the Kubo formula for conductance, we calculate the frequency-dependent response of a single-electron transistor (SET) driven by an ac signal. Treating tunneling processes within the lowest order approximation, valid for a wide…
A single-electron transistor (SET) can be used as an extremely sensitive charge detector. Mechanical displacements can be converted into charge, and hence, SETs can become sensitive detectors of mechanical oscillations. For studying…
The radio frequency single electron transistor (rf-SET) possesses key requirements necessary for reading out a solid state quantum computer. This work explores the use of the rf-SET as a single-shot readout device in the presence of 1/f and…
We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport…
We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the…
We present results on a double-island single-electron transistor (DISET) operated at radio-frequency (rf) for fast and highly sensitive detection of charge motion in the solid state. Using an intuitive definition for the charge sensitivity,…
The nanoscale charge environment critically influences semiconductor physics and device performance. While conventional bulk characterization techniques provide volume-averaged defect properties, they lack the spatial resolution to resolve…
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as…
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…
We have analyzed numerically the response and noise-limited charge sensitivity of a radio-frequency single-electron transistor (RF-SET) in a non-superconducting state using the orthodox theory. In particular, we have studied the performance…
We analyze the noise properties of two single electron transistors (SETs) coupled via a shared voltage gate consisting of a nanomechanical resonator. Working in the regime where the resonator can be treated as a classical system, we find…