Related papers: Defect detection in nano-scale transistors based o…

We study anomalies in the Coulomb blockade spectrum of a quantum dot formed in a silicon nanowire. These anomalies are attributed to electrostatic interaction with charge traps in the device. A simple model reproduces these anomalies…

The current through ferromagnetic single-electron transistors (SET's) is considered. Using path integrals the linear response conductance is formulated as a function of the tunnel conductance vs. quantum conductance and the temperature vs.…

Silicon Drift Detectors, widely employed in high-resolution and high-rate X-ray applications, are considered here with interest also for electron detection. The accurate measurement of the tritium beta decay is the core of the TRISTAN…

We present observations of background charge fluctuators near an Al-AlO_x-Al single-electron transistor on an oxidized Si substrate. The transistor design incorporates a heavily doped substrate and top gate, which allow for independent…

Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by…

A supercurrent transistor is a superconductor-semiconductor hybrid device in which the Josephson supercurrent is switched on and off using a gate voltage. While such devices have been studied using DC transport, radio-frequency measurements…

This paper describes the setup and the results of the direct on-wafer measurements of a FET noise parameters obtained with a source-pull method at temperatures down to T=4K and in the 5-12 GHz frequency range. The setup consists of a…

Superconducting resonators, used in astronomy and quantum computation, couple strongly to microscopic two-level defects. We monitor the microwave response of superconducting resonators and observe fluctuations in dissipation and resonance…

Experiments on the direction-resolved full-counting statistics of single-electron tunneling allow testing the fundamentally important Fluctuation Theorem (FT). At the same time, the FT provides a frame for analyzing such data. Here we…

In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…

We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes…

Carbon nanotube (CNT) electromechanical resonators have demonstrated unprecedented sensitivities for detecting small masses and forces. The detection speed in a cryogenic setup is usually limited by the CNT contact resistance and parasitic…

Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their…

We study gated field effect transistors (FETs) with fractal geometries under Dyakonov and Shur asymmetric boundary conditions, where the source and drain span the left and right edges of the device respectively. An AC THz potential…

Since dissipative processes are ubiquitous in semiconductors, characterizing how electronic and thermal energy transduce and transport at the nanoscale is vital for understanding and leveraging their fundamental properties. For example, in…

We report on a systematic study of the Coulomb blockade effects in nanofabricated narrow constrictions in thin (Ga,Mn)As films. Different low-temperature transport regimes have been observed for decreasing constriction sizes: the ohmic, the…

We have studied the resistivity, $\rho$, of a two-dimensional electron system in silicon in the temperature range 200 mK < T < 7.5 K at zero magnetic field at low electron densities, when the electron system is in the insulating regime. Our…

We report on charge detection in electrostatically-defined quantum dot devices in bilayer graphene using an integrated charge detector. The device is fabricated without any etching and features a graphite back gate, leading to high quality…

We have studied the environmental effect on superconducting single-electron transistors (S-SETs) by biasing S-SETs with arrays of small-capacitance dc SQUIDs, whose effective impedance can be varied in situ. As the zero-bias resistance of…

The charge transport behaviors of parallel double single electron transistors (SETs) are investigated by the Anderson model with two impurity levels. The nonequilibrium Keldysh Green's technique is used to calculate the current-voltage…