Related papers: Defect detection in nano-scale transistors based o…

In semiconductor detectors designed for capturing dark matter particles or neutrinos, when the detection threshold is constantly improved to increasingly low energies, an "excess" signal of apparent energy release events below a few hundred…

We experimentally study the electrical transport properties of Ge/Si core/shell nanowire device with two superconducting leads in the Coulomb blockade regime. Anomalous zero field magnetoconductance peaks are observed for the first time at…

We report here on measurements of the reflectivity and loss tangent measured in the W-band (80-125 GHz) and D-band (125-180 GHz) in two samples of float zone silicon with intrinsic stoichiometry - one irradiated by neutrons, which increases…

We report an experimental observation of the backaction of a Single Electron Transistor (SET) measuring the Coulomb staircase of a single electron box. As current flows through the SET, the charge state of the SET island fluctuates. These…

We examine the Breit-Wigner resonances that ensue from field effects in molecular single electron transistors (SETs). The adiabatic dynamics of a quantum dot elastically attached to electrodes are treated in the Born-Oppenheimer approach.…

We have measured the low-temperature transport properties of an open quantum dot formed in a clean one-dimensional channel. For the first time, at zero magnetic field, continuous and periodic oscillations superimposed upon ballistic…

We study the Coulomb blockade in a chaotic quantum dot connected to a lead by a single channel at nearly perfect transmission. We take into account quantum fluctuations of the dot charge and a finite level spacing for electron states within…

We present a method to measure the critical temperature of the island of a superconducting single electron transistor. The method is based on a sharp change in the slope of the zero-bias conductance as a function of temperature. We have…

Using a classical equation of motion, dynamics of the phase is analyzed in the Inductive Single-Electron Transistor (L-SET) which is a promising new system suitable for quantum measurement with ultimate sensitivity and low back-action. In a…

We have embedded a physically defined p-channel silicon MOS quantum dot (QD) device into an impedance transformer RC circuit. To decrease the parasitic capacitance and surpass the cutoff frequency of the device which emerges in MOS devices…

Recent studies of silicon spin qubits at temperatures above 1 K are encouraging demonstrations that the cooling requirements for solid-state quantum computing can be considerably relaxed. However, qubit readout mechanisms that rely on…

In the context of particle detectors, low-temperature covalent wafer-wafer bonding allows for integration of high-Z materials as absorbing layers with readout chips produced in standard CMOS processes. This enables for instance the…

We present the noise performance of High Electron Mobility Transistors (HEMT) developed by CNRS-C2N laboratory. Various HEMT's gate geometries with 2 pF to 230 pF input capacitance have been studied at 4 K. A model for both voltage and…

We have incorporated an aluminum single electron transistor (SET) directly on top of a vertical quantum dot, enabling the use of the SET as an electrometer that is extremely responsive to the motion of charge into and out of the dot. Charge…

The damping rates of high quality factor nanomechanical resonators are well beyond intrinsic limits. Here, we explore the underlying microscopic loss mechanisms by investigating the temperature-dependent damping of the fundamental and third…

We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…

Many important phenomena in quantum devices are dynamic, meaning that they cannot be studied using time-averaged measurements alone. Experiments that measure such transient effects are collectively known as fast readout. One of the most…

The ASPECT-BET (An sdd-SPECTrometer for BETa decay studies) project aims to develop a novel technique for the precise measurement of forbidden $\beta$ spectra in the 10 keV - 1 MeV range. This technique uses a Silicon Drift Detector (SDD)…

Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired…

We report on the influence of low gamma irradiation (10^4 Gy) on the noise properties of individual carbon nanotube (CNT) field-effect transistors (FETs) with different gate configurations and two different dielectric layers, SiO2 and…